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CQY80N

P1-P3P4-P6P7-P8
Document Number: 83533 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.9, 13-Oct-09 263
Optocoupler, Phototransistor Output, with Base Connection
CQY80N, CQY80NG
Vishay Semiconductors
DESCRIPTION
The CQY80N(G) series consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
6 pin plastic dual inline package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: BS EN 41003, BS EN 60065, BS EN 60950
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO (SETI): EN 60950, certificate no. FI25155
FEATURES
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp.
IEC 60664)
• Special construction: therefore, extra low
coupling capacity of typical 0.3 pF, high common
mode rejection
• Low temperature coefficient of CTR
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV peak
• Isolation test voltage (partial discharge test voltage)
V
pd
= 1.6 kV
• Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
• Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
(848 V peak)
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI = 275
• Thickness through insulation ≥ 0.75 mm
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5 (VDE 0884)
Note
G = leadform 10.16 mm; G is not marked on the body.
C
E
B
18537_5
231
546
NCC (-)A (+)
V
DE
17201_4
ORDER INFORMATION
PART REMARKS
CQY80N CTR > 50 %, DIP-6
CQY80NG CTR > 50 %, DIP-6
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83533
264 Rev. 1.9, 13-Oct-09
CQY80N, CQY80NG
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Forward current I
F
60 mA
Power dissipation P
diss
70 mW
Junction temperature T
j
125 °C
Forward surge current t
p
≤ 10 µs I
FSM
1.5 A
OUTPUT
Collector emitter voltage V
CEO
32 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation P
diss
70 mW
Junction temperature T
j
125 °C
COUPLER
Isolation test voltage (RMS) t = 1 min V
ISO
5000 V
RMS
Total power dissipation P
tot
250 mW
Ambient temperature range T
amb
- 55 to + 100 °C
Storage temperature range T
stg
- 55 to + 125 °C
Soldering temperature
(2)
2 mm from case, t ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTCS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
32 V
Emitter collector voltage I
E
= 100 µA V
ECO
7V
Collector emitter leakage current
V
CE
= 20 V, I
F
= 0 A,
E = 0
I
CEO
10 200 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100 Ω
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA CTR 50 90 %
Document Number: 83533 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.9, 13-Oct-09 265
CQY80N, CQY80NG
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5 (VDE 0884)/DIN EN 60747-; IEC 60747
MAXIMUM SAFETY RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current I
F
130 mA
OUTPUT
Power dissipation P
diss
265 mW
COUPLER
Rated impulse voltage V
IOTM
6kV
Safety temperature T
si
150 °C
INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
6kV
V
pd
1.3 kV
Insulation resistance
V
IO
= 500 V R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω
0
25
50
75
100
125
150
175
200
225
250
275
0 25 50 75 100 125 150 175
P - Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
95 10923
tot
P
si
(mW)
I
si
(mA)
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
P1-P3P4-P6P7-P8

CQY80N

Mfr. #:
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Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR >50%
Lifecycle:
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