Document Number: 83533 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.9, 13-Oct-09 267
CQY80N, CQY80NG
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
Fig. 10 - Collector Base Current vs. Forward Current
Fig. 11 - Collector Current vs. Forward Current
0
50
100
150
200
250
300
04080 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4
2.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
T
amb
- Ambient Temperature (°C)
96 11920
CTR
rel
- Relative Current Transfer Ratio
V
CE
= 5 V
I
F
= 10 mA
0255075
1
10
100
1000
10 000
I
CEO
- Collector Dark Current,
100
95 11026
with Open Base (nA)
V
CE
= 20 V
I
F
= 0
T
amb
- Ambient Temperature (°C)
110
0.001
0.01
0.1
1
I
CB
- Collector Base Current (mA)
I
F
- Forward Current (mA)
100
95 11052
V
S
= 5 V
0.1 1 10
0.01
0.1
1
100
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
100
95 11053
10
V
CE
= 5 V