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NX5P2924BUKZ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
NX5P2924B
All informatio
n provided in this d
ocument is subje
ct to legal disclai
mers.
© NXP B.V
. 2014. All rights r
eserved.
Product data sheet
Rev
. 1 — 24 February 2
014
13 of 18
NXP Semiconductors
NX5P2924B
Logic controlled high-side power swit
ch
V
I(VIN)
= 3.6 V
; R
L
= 10
; C
L
= 20
F; T
amb
= 25
C.
(1)
VOUT
(2)
EN
(3)
I
I(VIN)
V
I(VIN)
= 3.6 V
; R
L
= 10
; C
L
= 20
F; T
amb
= 25
C
(1)
VOUT
(2)
EN
Fig 20.
T
ypical enable time at V
I(VIN)
= 3.6 V
; C
L
=2
0
F
Fig 21.
T
ypical d
isable time at V
I(VIN)
= 3.6 V
;
C
L
=2
0
F
WXV
DDD
9287
(1
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P$
WXV
DDD
9287
(1
9
NX5P2924B
All informatio
n provided in this d
ocument is subje
ct to legal disclai
mers.
© NXP B.V
. 2014. All rights r
eserved.
Product data sheet
Rev
. 1 — 24 February 2
014
14 of 18
NXP Semiconductors
NX5P2924B
Logic controlled high-side power swit
ch
14. Package
outline
Fig 22.
Package
outline NX5P2924B
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NX5P2924B
All informatio
n provided in this d
ocument is subje
ct to legal disclai
mers.
© NXP B.V
. 2014. All rights r
eserved.
Product data sheet
Rev
. 1 — 24 February 2
014
15 of 18
NXP Semiconductors
NX5P2924B
Logic controlled high-side power swit
ch
15. Abbreviations
16. Revision
history
T
able 13.
Abbreviations
Acronym
Description
CDM
Charged Device Mo
del
DUT
Device Under T
est
ESD
ElectroS
tatic Discharge
HBM
Human Body Model
IEC
International Electrotechnical Commission
MOSFET
Metal-Oxide Semiconductor Field Effect T
ransistor
T
able 14.
Revision history
Document ID
Release date
Da
t
a sheet status
Change notice
Supersedes
NX5P2924B v
.1
20140224
Product data sheet
-
-
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
NX5P2924BUKZ
Mfr. #:
Buy NX5P2924BUKZ
Manufacturer:
NXP Semiconductors
Description:
Power Switch ICs - Power Distribution Logic controlled High-side pwr switch
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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NX5P2924BUKZ