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NX5P2924BUKZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NX5P2924B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 24 February 2014 4 of 18
NXP Semiconductors
NX5P2924B
Logic controlled high-side power switch
9. Limiting values
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
[3] The (absolute) maximum power dissipation depends on the junction temperature T
j
. Higher power dissipation is allowed with lower
ambient temperatures. The conditions to determine the specified values are T
amb
= 85 °C and the use of a two layer PCB.
10. Recommended operating conditions
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
I
input voltage input EN
[1]
0.5 +6.0 V
input VIN
[2]
0.5 +6.0 V
V
SW
switch voltage output VOUT
[2]
0.5 V
I(VIN)
V
I
IK
input clamping current input EN: V
I(EN)
< 0.5 V 50 - mA
I
SK
switch clamping current input VIN: V
I(VIN)
< 0.5 V 50 - mA
output VOUT: V
O(VOUT)
< 0.5 V 50 - mA
output VOUT: V
O(VOUT)
>V
I(VIN)
0.5 V - 50 mA
I
SW
switch current V
SW
> 0.5 V - 2500 mA
T
j(max)
maximum junction
temperature
40 +125 C
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation
[3]
- 470 mW
Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
I
input voltage 0.8 5.5 V
T
amb
ambient temperature 40 +85 C
NX5P2924B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 24 February 2014 5 of 18
NXP Semiconductors
NX5P2924B
Logic controlled high-side power switch
11. Thermal characteristics
[1] R
th(j-a)
is dependent upon board layout. To minimize R
th(j-a)
, ensure that all pins have a solid connection to larger copper layer areas. In
multi-layer PCBs, the second layer should be used to create a large heat spreader area below the device. Avoid using solder-stop
varnish under the device.
12. Static characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient
[1]
139 K/W
Table 8. Static characteristics
V
I(VIN)
= 1.0 V to 5.5 V, unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +85 C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level input
voltage
EN input; V
I(VIN)
= 0.8 V - 0.7 - - - V
EN input; V
I(VIN)
= 1.0 V to 1.2 V 0.9 - - 0.9 - V
EN input; V
I(VIN)
= 1.2 V to 2.5 V 1.2 - - 1.2 - V
EN input; V
I(VIN)
= 2.5 V to 5.5 V 1.2 - - 1.2 - V
V
IL
LOW-level input
voltage
EN input; V
I(VIN)
= 0.8 V - 0.25 - - - V
EN input; V
I(VIN)
= 1.0 V to 1.2 V - - 0.3 - 0.3 V
EN input; V
I(VIN)
= 1.2 V to 2.5 V - - 0.4 - 0.4 V
EN input; V
I(VIN)
= 2.5 V to 5.5 V - - 0.6 - 0.6 V
I
I
input leakage
current
EN input; V
I(EN)
= 0.9 V to 5.5 V - - - - 0.1 A
R
dch
discharge
resistance
VOUT output; V
I(VIN)
= 0.8 V - 4.00 - - - k
VOUT output; V
I(VIN)
= 1.0 V - 1.40 - - - k
VOUT output; V
I(VIN)
= 1.2 V - 1.30 - - - k
VOUT output; V
I(VIN)
= 1.8 V - 1.27 1.50 - - k
VOUT output; V
I(VIN)
= 3.3 V - 1.25 1.50 - - k
VOUT output; V
I(VIN)
= 5.5 V - 1.25 1.50 - - k
NX5P2924B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 24 February 2014 6 of 18
NXP Semiconductors
NX5P2924B
Logic controlled high-side power switch
[1] All typical values are measured at V
I(VIN)
= 3.6 V and T
amb
=25C unless otherwise specified.
I
(VIN)
supply current VOUTopen
EN = HIGH; V
I(VIN)
=1.0V;
see Figure 5 and Figure 6
-25- - 35 A
EN = HIGH; V
I(VIN)
=1.8V;
see Figure 5 and Figure 6
-30- - 50 A
EN = HIGH; V
I(VIN)
=3.6V;
see Figure 5
and Figure 6
-45- - 65 A
EN = HIGH; V
I(VIN)
=5.5V;
see Figure 5
and Figure 6
-75- - 105A
EN = LOW; V
I(VIN)
=1.0V;
see Figure 7 and Figure 8
-0.1- - 0.8 A
EN = LOW; V
I(VIN)
=1.8V;
see Figure 7
and Figure 8
-0.1- - 1.0 A
EN = LOW; V
I(VIN)
=3.6V;
see Figure 7 and Figure 8
-0.1- - 1.2 A
EN = LOW; V
I(VIN)
=5.5V;
see Figure 7 and Figure 6
-0.1- - 1.5 A
I
S(OFF)
OFF-state
leakage current
EN = LOW; V
I(VIN)
=1.8V;
V
I(VOUT)
=0 V; see Figure 9 and
Figure 10
- 0.5 - 3.5 - A
EN = LOW; V
I(VIN)
=3.6V;
V
I(VOUT)
=0 V; see Figure 9 and
Figure 10
- 0.5 - 5.0 - A
EN = LOW; V
I(VIN)
=5.5V;
V
I(VOUT)
=0 V; see Figure 9 and
Figure 10
- 0.5 - 7.5 - A
C
I
input capacitance EN - 3 - - - pF
C
S(ON)
ON-state
capacitance
VIN; VOUT - - 0.5 - 0.5 nF
Table 8. Static characteristics
…continued
V
I(VIN)
= 1.0 V to 5.5 V, unless otherwise specified; Voltages are referenced to GND (ground = 0 V). …continued
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +85 C Unit
Min Typ
[1]
Max Min Max
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

NX5P2924BUKZ

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Buy NX5P2924BUKZ
Manufacturer:
NXP Semiconductors
Description:
Power Switch ICs - Power Distribution Logic controlled High-side pwr switch
Lifecycle:
New from this manufacturer.
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