BT258X-800R,127

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DATA SHEET
Product specification October 2002
DISCRETE SEMICONDUCTORS
BT258X series
Thyristors
logic level
NXP Semiconductors Product specification
Thyristors BT258X series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated, sensitive gate thyristors SYMBOL PARAMETER MAX. MAX. MAX. UNIT
in a full pack, plastic envelope,
intended for use in general purpose BT258X- 500R 600R 800R
switching and phase control V
DRM
, Repetitive peak off-state 500 600 800 V
applications. These devices are V
RRM
voltages
intended to be interfaced directly to I
T(AV)
Average on-state current 5 5 5 A
microcontrollers, logic integrated I
T(RMS)
RMS on-state current 8 8 8 A
circuits and other low power gate I
TSM
Non-repetitive peak on-state 75 75 75 A
trigger circuits. current
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
V
DRM
, V
RRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(AV)
Average on-state current half sine wave; T
hs
90 ˚C - 5 A
I
T(RMS)
RMS on-state current all conduction angles - 8 A
I
TSM
Non-repetitive peak half sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 10 ms - 75 A
t = 8.3 ms - 82 A
I
2
tI
2
t for fusing t = 10 ms - 28 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 10 A; I
G
= 50 mA; - 50 A/µs
on-state current after dI
G
/dt = 50 mA/µs
triggering
I
GM
Peak gate current - 2 A
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125
2
˚C
temperature
ak
g
123
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.
October 2002 1 Rev 2.000

BT258X-800R,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
SCRs RAIL SCR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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