NXP Semiconductors Product specification
Thyristors BT258X series
logic level
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance with heatsink compound - - 5.0 K/W
junction to heatsink without heatsink compound - - 6.9 K/W
R
th j-a
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current V
D
= 12 V; I
T
= 0.1 A - 50 200 µA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A - 0.4 10 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 0.3 6 mA
V
T
On-state voltage I
T
= 16 A - 1.3 1.6 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.4 1.5 V
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 110 ˚C 0.1 0.2 - V
I
D
, I
R
Off-state leakage current V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C; 50 100 - V/µs
off-state voltage exponential waveform; R
GK
= 100 Ω
t
gt
Gate controlled turn-on I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 5 mA; - 2 - µs
time dI
G
/dt = 0.2 A/µs
t
q
Circuit commutated V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C; - 100 - µs
turn-off time I
TM
= 12 A; V
R
= 24 V; dI
TM
/dt = 10 A/µs;
dV
D
/dt = 2 V/µs; R
GK
= 1 kΩ
October 2002 2 Rev 2.000