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SI9926CDY-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68606
S09-0704-Rev. B, 27-Apr-09
Vishay Siliconix
Si9926CDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
10
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
100
T
J
= 25 °C
0.4
0.6
0.
8
1.0
1.2
1.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.010
0.020
0.030
0.040
02468 10
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
= 8.3 A
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001
1001
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
Limited by R
DS(on)
*
BVDSS
Limited
DC
10 s
1 s
100 ms
10 ms
1 ms
100 µs
Document Number: 68606
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
5
Vishay Siliconix
Si9926CDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
12
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68606
S09-0704-Rev. B, 27-Apr-09
Vishay Siliconix
Si9926CDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68606
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T -
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9

SI9926CDY-T1-GE3

Mfr. #:
Buy SI9926CDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 12V Vgs SO-8
Lifecycle:
New from this manufacturer.
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