SI9926CDY-T1-E3

SI9926CDY-T1-E3
Mfr. #:
SI9926CDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 12V Vgs SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SI9926CDY-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI9926CDY-T1-E3 DatasheetSI9926CDY-T1-E3 Datasheet (P4-P6)SI9926CDY-T1-E3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI9926CDY-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
18 mOhms
Vgs th - Gate-Source Threshold Voltage:
600 mV
Vgs - Gate-Source Voltage:
4.5 V
Qg - Gate Charge:
22 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.1 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Series:
SI9
Transistor Type:
2 N-Channel
Width:
3.9 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
45 S
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
15 ns
Part # Aliases:
SI9926CDY-E3
Unit Weight:
0.006596 oz
Tags
SI9926CDY-T1, SI9926CDY-T, SI9926CD, SI9926C, SI9926, SI992, SI99, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
SI9926CDY-T1-E3 Dual N-channel MOSFET Module; 8 A; 20 V; 8-Pin SOIC
***ure Electronics
Dual N-Channel 20 V 0.018 Ohms Surface Mount Power Mosfet - SOIC-8
***et
Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R
***ark
Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No
***ment14 APAC
MOSFET, DUAL, NN, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Junction Temperature Tj Max:150°C; Package / Case:SO-8; Power Dissipation Pd:3.1W; Power Dissipation Pd:3.1W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.6V
***ure Electronics
Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET
***ark
Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC
***roFlash
Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***ure Electronics
Single P-Channel 20 V 0.04 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -20V, -6.7A, 40 mOhm, 33.3 nC Qg, SO-8
***ineon SCT
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P, LOGIC, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***ure Electronics
Dual N/P-Channel 20 V 28/45 mOhm 11.6/15.4 nC 2.14 W Silicon Mosfet - SOIC-8
***(Formerly Allied Electronics)
20V Compl. Pair Enhancement MOSFET SOIC8
***et
Trans MOSFET N/P-CH 20V 8.5A/6.8A 8-Pin SO T/R
***ark
Mosfet, Dual, N/p-Ch, 20V, 7.8A Rohs Compliant: Yes
***des Inc SCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, 1.8 W
***ure Electronics
Single N-Channel 20 V 0.025 Ohms Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R
***ark
N-CH MOSFET SO-8 20V 25MOHM AT 10V - LEAD FREE VERSION
***S
French Electronic Distributor since 1988
***ser
N-Channel MOSFETs 20V 8.5A 2.5W
***ler Electronic
Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R
***ark
DUAL MOSFET, N-CH, 20V, 7.63A, SOIC ROHS COMPLIANT: YES
***(Formerly Allied Electronics)
Dual N-Channel Enhancement MOSFET SOIC8
***des Inc SCT
N-Channel Mosfet, 20V VDS, 12±V VGS
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Part # Mfg. Description Stock Price
SI9926CDY-T1-E3
DISTI # V72:2272_09216523
Vishay IntertechnologiesTrans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R
RoHS: Compliant
386
  • 250:$0.5356
  • 100:$0.5951
  • 25:$0.7499
  • 10:$0.7523
  • 1:$0.8760
SI9926CDY-T1-E3
DISTI # SI9926CDY-T1-E3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
42In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI9926CDY-T1-E3
DISTI # SI9926CDY-T1-E3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
42In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI9926CDY-T1-E3
DISTI # SI9926CDY-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.5852
SI9926CDY-T1-E3
DISTI # 27555268
Vishay IntertechnologiesTrans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R
RoHS: Compliant
386
  • 250:$0.5345
  • 100:$0.5939
  • 25:$0.7475
  • 15:$0.7499
SI9926CDY-T1-E3
DISTI # SI9926CDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9926CDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.3389
  • 5000:$0.3289
  • 10000:$0.3159
  • 15000:$0.3069
  • 25000:$0.2989
SI9926CDY-T1-E3
DISTI # 40P0824
Vishay IntertechnologiesMOSFET, DUAL, NN, SO-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):18mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V,No. of Pins:8Pins , RoHS Compliant: Yes1214
  • 1:$1.2000
  • 10:$0.9980
  • 25:$0.9270
  • 50:$0.8570
  • 100:$0.7860
  • 250:$0.7380
  • 500:$0.6890
SI9926CDY-T1-E3.
DISTI # 28AC2187
Vishay IntertechnologiesDUAL N-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: NO0
  • 1:$0.5120
  • 2500:$0.5120
SI9926CDY-T1-E3
DISTI # 70026301
Vishay SiliconixSI9926CDY-T1-E3 Dual N-channel MOSFET Module,8 A,20 V,8-Pin SOIC
RoHS: Compliant
0
  • 2500:$0.6000
  • 5000:$0.5700
  • 12500:$0.5500
  • 25000:$0.5300
  • 62500:$0.5200
SI9926CDY-T1-E3
DISTI # 781-SI9926CDY-E3
Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs SO-8
RoHS: Compliant
4091
  • 1:$1.0800
  • 10:$0.8840
  • 100:$0.6780
  • 500:$0.5830
  • 1000:$0.5520
  • 2500:$0.5120
SI9926CDY-T1-E3Vishay Siliconix8000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET72
  • 29:$0.4800
  • 6:$0.7200
  • 1:$0.9600
SI9926CDY-T1-E3Vishay Intertechnologies 2026
    SI9926CDY-T1-E3
    DISTI # C1S803600929593
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R
    RoHS: Compliant
    386
    • 250:$0.5356
    • 100:$0.5951
    • 10:$0.7523
    SI9926CDY-T1-E3Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs SO-8
    RoHS: Compliant
    Americas -
      SI9926CDY-T1-E3
      DISTI # 1684059
      Vishay IntertechnologiesMOSFET, DUAL, NN, SO-8
      RoHS: Compliant
      15915
      • 5:£0.7610
      • 25:£0.6810
      • 100:£0.5230
      • 250:£0.4870
      • 500:£0.4500
      SI9926CDY-T1-E3
      DISTI # 1684059RL
      Vishay IntertechnologiesMOSFET, DUAL, NN, SO-8
      RoHS: Compliant
      0
      • 1:$1.7200
      • 10:$1.4000
      • 100:$1.0800
      • 500:$0.9230
      • 1000:$0.8740
      • 2500:$0.8110
      SI9926CDY-T1-E3
      DISTI # 1684059
      Vishay IntertechnologiesMOSFET, DUAL, NN, SO-8
      RoHS: Compliant
      1214
      • 1:$1.7200
      • 10:$1.4000
      • 100:$1.0800
      • 500:$0.9230
      • 1000:$0.8740
      • 2500:$0.8110
      Image Part # Description
      SIP32429DN-T1-GE4

      Mfr.#: SIP32429DN-T1-GE4

      OMO.#: OMO-SIP32429DN-T1-GE4

      Power Switch ICs - Power Distribution 56mOhm 28volt Smart Load Switch
      TPS613222ADBVR

      Mfr.#: TPS613222ADBVR

      OMO.#: OMO-TPS613222ADBVR

      Switching Voltage Regulators FG OF TPS613222ADBV
      TLV75533PDBVR

      Mfr.#: TLV75533PDBVR

      OMO.#: OMO-TLV75533PDBVR

      LDO Voltage Regulators 500MA LDO
      150120BS75000

      Mfr.#: 150120BS75000

      OMO.#: OMO-150120BS75000

      Standard LEDs - SMD WL-SMCW SMDMono TpVw Waterclr 1206 Blue
      PEC11L-4220F-S0015

      Mfr.#: PEC11L-4220F-S0015

      OMO.#: OMO-PEC11L-4220F-S0015-BOURNS

      Encoders FLATTED SHAFT PUSH SWTCH 30DETENTS
      TLV75533PDBVR

      Mfr.#: TLV75533PDBVR

      OMO.#: OMO-TLV75533PDBVR-TEXAS-INSTRUMENTS

      IC REG LINEAR 3.3V 500MA SOT23-5
      TMP1075DR

      Mfr.#: TMP1075DR

      OMO.#: OMO-TMP1075DR-TEXAS-INSTRUMENTS

      DIGITAL TEMP SENSOR W/ 2-WIRE IN
      TPS613222ADBVR

      Mfr.#: TPS613222ADBVR

      OMO.#: OMO-TPS613222ADBVR-TEXAS-INSTRUMENTS

      IC REG BOOST 5V 2.5A SOT23-5
      TMP1075DSGR

      Mfr.#: TMP1075DSGR

      OMO.#: OMO-TMP1075DSGR-1190

      High-accuracy upgrade to industry standard LM75 / TMP75 I2C temperature senso
      SIP32429DN-T1-GE4

      Mfr.#: SIP32429DN-T1-GE4

      OMO.#: OMO-SIP32429DN-T1-GE4-VISHAY

      Power Switch ICs - Power Distribution 56mOhm 28volt Smart Load Switch
      Availability
      Stock:
      Available
      On Order:
      1988
      Enter Quantity:
      Current price of SI9926CDY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.07
      $1.07
      10
      $0.88
      $8.83
      100
      $0.68
      $67.70
      500
      $0.58
      $291.00
      1000
      $0.46
      $460.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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