SI9926CD

SI9926CDY-T1-E3 vs SI9926CDY vs SI9926CDY-T1

 
PartNumberSI9926CDY-T1-E3SI9926CDYSI9926CDY-T1
DescriptionMOSFET 20V Vds 12V Vgs SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance18 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.1 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesSI9--
Transistor Type2 N-Channel--
Width3.9 mm--
BrandVishay / Siliconix--
Forward Transconductance Min45 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSI9926CDY-E3--
Unit Weight0.006596 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI9926CDY-T1-E3 MOSFET 20V Vds 12V Vgs SO-8
SI9926CDY-T1-GE3 MOSFET 20V Vds 12V Vgs SO-8
SI9926CDY-T1-GE3. MOSFET DUAL N-CHANNEL 20-V (D-S)
SI9926CDY-T1-E3-CUT TAPE New and Original
SI9926CDY-T1-GE3-CUT TAPE New and Original
SI9926CDY New and Original
SI9926CDY-T1 New and Original
SI9926CDY-TI-E3 New and Original
Vishay
Vishay
SI9926CDY-T1-GE3 MOSFET 2N-CH 20V 8A 8-SOIC
SI9926CDY-T1-E3 Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R
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