REV. A
–3–
AD8018
Parameter Conditions Min Typ Max Unit
LOGIC INPUTS (PWDN1, 0)
Logic “1” Voltage 2.0 V
Logic “0” Voltage 0.8 V
Logic Input Bias Current 240 A
Standby Recovery Time R
L
= 10 Ω, G = +2, I
S
= 90% of Typical 500 ns
Specifications subject to change without notice.
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
AD8018AR –40°C to +85°C 8-Lead Plastic SO-8
SOIC
AD8018AR–REEL –40°C to +85°C 8-Lead SOIC SO-8
AD8018AR–REEL7 –40°C to +85°C 8-Lead SOIC SO-8
AD8018ARU –40°C to +85°C 14-Lead Plastic RU-14
TSSOP
AD8018ARU–REEL –40°C to +85°C 14-Lead Plastic RU-14
TSSOP
AD8018ARU–REEL7 –40°C to +85°C 14-Lead Plastic RU-14
TSSOP
AD8018ARU–EVAL Evaluatio
n Board RU-14
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 650 mW
TSSOP Package (RU) . . . . . . . . . . . . . . . . . . . . . . 565 mW
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Logic Voltage, PWDN0, 1 . . . . . . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.6 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range RU, R . . . . . . . –65°C to +150°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for the device on a 4-layer board in free air at 85°C:
8-Lead SOIC Package: θ
JA
= 100°C/W.
14-Lead TSSOP Package: θ
JA
= 115°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8018
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change
in the stresses exerted on the die by the package. Exceeding a
junction temperature of 175°C for an extended period can result
in device failure.
While the AD8018 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tempera-
ture (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
AMBIENT TEMPERATURE – ⴗC
2.0
–50
MAXIMUM POWER DISSIPATION – Watts
1.5
1.0
0.5
0
–40 –30 –20 –100 10 2030 4050 6070 8090
T
J
= 150ⴗC
14-LEAD TSSOP PACKAGE
8-LEAD SOIC PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8018 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
