PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 4 of 17
NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
peak pulse power t
p
= 8/20 µs
[1][2]
-25W
I
PP
peak pulse current t
p
= 8/20 µs
[1][2]
- 2.5 A
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
-20kV
MIL-STD-883 (human
body model)
-10kV
Table 8. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
