PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 7 of 17
NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
T
amb
=25°C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
f = 1 MHz; T
amb
=25°C
(1) PESD3V3L5UF; PESD3V3L5UV; PESD3V3L5UY
(2) PESD5V0L5UF; PESD5V0L5UV; PESD5V0L5UY
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Relative variation of reverse current as a
function of junction temperature; typical values
006aab139
110
4
10
3
10 10
2
10
10
2
P
PP
(W)
1
t
p
(µs)
006aab140
T
j
(°C)
0 15010050
0.4
0.8
0.2
0.6
1.0
1.2
0
P
PP
P
PP(25°C)
006aab141
V
R
(V)
054231
(1)
(2)
10
5
15
25
20
C
d
(pF)
0
006aab142
T
j
(°C)
−75 −25 17512525 75
1
10
10
−1
I
R
I
R(25°C)
