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HMC753LP4ETR

P1-P3P4-P6P7-P9P10-P12P13-P14
Data Sheet HMC753
Rev. D | Page 3 of 13
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
T
A
= 25°C, V
DD
= 5 V, I
DD
= 55 mA.
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 1 6 GHz
PERFORMANCE
Gain 14 16.5 dB
Gain Variation over Temperature 0.004 dB/°C
Noise Figure 1.5 2 dB
Input Return Loss 11 dB
Output Return Loss 18 dB
Output Power for 1 dB Compression (P1dB) 18 dBm
Saturated Output Power (P
SAT
) 20 dBm
Output Third Order Intercept (IP3) 30 dBm
POWER SUPPLY
Supply Current (I
DD
) 55 mA V
DD
= 5 V, set V
GG
2 = 1.5 V, V
GG
1 = −0.8 V typical
Table 2.
Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 6 11 GHz
PERFORMANCE
Gain 10 14 dB
Gain Variation over Temperature 0.008 dB/°C
Noise Figure 2 2.7 dB
Input Return Loss 8 dB
Output Return Loss 12 dB
Output Power for 1 dB Compression (P1dB) 15 dBm
Saturated Output Power (P
SAT
) 17 dBm
Output Third Order Intercept (IP3) 28 dBm
POWER SUPPLY
Supply Current (I
DD
) 55 mA V
DD
= 5 V, set V
GG
2 = 1.5 V, V
GG
1 = −0.8 V typical
HMC753 Data Sheet
Rev. D | Page 4 of 13
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Drain Bias Voltage 6.0 V
RF Input Power
12 dBm
Gate Bias Voltage
V
GG
1 −1 V to +0.3 V
V
GG
2 0 V to 2.5 V
Channel Temperature 180°C
Continuous P
DISS
(T
A
) = 85°C), Derate
8.4 mW/°C Above 85°C
0.8 W
Thermal Resistance (Channel to Die Bottom) 119°C/W
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
ESD Sensitivity
Human Body Model (HBM) Class 0, Passed
100 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Data Sheet HMC753
Rev. D | Page 5 of 13
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
13
1
3
4
2
7
GND
GND
RFIN
GND
5
6
GND
GND
GND
14
GND
15
GND
16
RFOUT
17
GND
18
GND
GND
8
V
GG
2
9
V
GG
1
10
V
DD
11
NC
12
19
GND
GND
20
NC
21
NC
22
NC
23
NC
24
GND
HMC753
TOP VIEW
(Not to Scale)
NOTES
1. NC = NOT CONNECTED INTERNALLY. THESE PINS ARE
NOT INTERNALLY CONNECTED; HOWEVER, ALL DATA
SHOWN IS MEASURED WITH THESE PINS CONNECTED
EXTERNALLY TO RF/DC GROUND.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF/DC GROUND.
13494-002
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2, 4 to 7, 12 to 15, 17
to 19, 24
GND
Ground. The package bottom has an exposed metal pad that must be connected to RF/dc
ground.
3 RFIN RF Input. This pad is ac-coupled and matched to 50 Ω.
8, 9 V
GG
2, V
GG
1
Gate Control for the Amplifier. Follow the biasing procedures described in the Biasing
Procedure section. See Figure 22 for required external components.
10 V
DD
Power Supply Voltage for the Amplifier. See Figure 22 for required external components.
11, 20 to 23 NC
Not Internally Connected. These pins are not internally connected; however, all data shown is
measured with these pins connected externally to RF/dc ground.
16 RFOUT RF Output. This pad is ac-coupled and matched to 50 Ω.
EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground.
P1-P3P4-P6P7-P9P10-P12P13-P14

HMC753LP4ETR

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Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier LNA, 1-11GHz
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