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STD10NF30

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
1
3
TAB
2
DPAK
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
Features
Order code
V
DS
R
DS(on)
max. I
D
STD10NF30 300 V 0.33 Ω 10 A
• AEC-Q101 qualified
• 100% avalanche tested
• Low capacitance and gate charge
• 175 °C maximum junction temperature
Applications
• Switching applications
Description
This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay
process, which is based on an innovative strip layout. The inherent benefits of the
new technology coupled with the extra clamping capabilities make this product
particularly suitable for the harshest operation conditions, such as those encountered
in the automotive environment. The device is also well-suited for other applications
where extra ruggedness is required.
Product status link
STD10NF30
Product summary
Order code STD10NF30
Marking 10NF30
Package DPAK
Packing Tape and reel
Automotive-grade N-channel 300 V, 0.28 Ω typ., 10 A, MESH OVERLAY™
Power MOSFET in a DPAK package
STD10NF30
Datasheet
DS10271 - Rev 2 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 300 V
V
GS
Gate-source voltage ±20 V
I
D
Drain current (continuous) at T
C
= 25 °C
10 A
Drain current (continuous) at T
C
= 100 °C
6.3 A
I
DM
(1)
Drain current (pulsed) 40 A
P
TOT
Total dissipation at T
C
= 25 °C
103 W
dv/dt
(2)
.
Peak diode recovery voltage slope 12 V/ns
T
stg
Storage temperature range
-55 to 175 °C
T
j
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 10 A, di/dt ≤ 200 A/μs, V
DD
= 80% V
(BR)DSS
Table 2. Thermal data
Symbol
Parameter Value Unit
R
thj-case
Thermal resistance junction-case 1.45 °C/W
R
thj-pcb
(1)
Thermal resistance junction-pcb 50 °C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
Parameter Value Unit
I
AR
Avalanche current, repetitive or non-repetitive
(pulse width limited by T
Jmax
)
6 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
175 mJ
STD10NF30
Electrical ratings
DS10271 - Rev 2
page 2/16
2 Electrical characteristics
T
CASE
= 25 °C unless otherwise specified.
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 1 mA
300 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 300 V
1 µA
V
GS
= 0 V, V
DS
= 300 V,
T
C
= 125 °C
(1)
10 µA
I
GSS
Gate body leakage current
V
DS
= 0 V, V
GS
= ±20 V
±100 nA
V
GS(th)
Gate threshold voltage
V
DD
= V
GS
, I
D
= 250 µA
2 3 4 V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 5 A
0.28 0.33 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
- 780 - pF
C
oss
Output capacitance - 110 - pF
C
rss
Reverse transfer capacitance - 15 - pF
Q
g
Total gate charge
V
DD
= 240 V, I
D
= 10 A
V
GS
= 0 to 10 V
(see Figure 13. Test circuit for gate
charge behavior)
- 23 - nC
Q
gs
Gate-source charge - 3.5 - nC
Q
gd
Gate-drain charge - 11.3 - nC
Table 6. Switching times
Symbol
Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 150 V, I
D
= 5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 12. Test circuit for resistive
load switching times and Figure
17. Switching time waveform)
- 13.5 - ns
t
r
Rise time - 9.5 - ns
t
d(off)
Turn-off delay time - 32 - ns
t
f
Fall time - 9.5 - ns
Table 7. Source-drain diode
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 10 A
I
SDM
(1)
Source-drain current (pulsed) - 40 A
V
SD
(2)
Forward on voltage
I
SD
= 10 A, V
GS
= 0 V
- 1.5 V
STD10NF30
Electrical characteristics
DS10271 - Rev 2
page 3/16
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STD10NF30

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
MOSFET N-CHANNEL 300V 10A DPAK
Lifecycle:
New from this manufacturer.
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