OMO ElectronicOMO Electronic
Expand menu
0 Cart

STD10NF30

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
SD
= 10 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see Figure 14. Test circuit for inductive
load switching and diode recovery times)
- 145 ns
Q
rr
Reverse recovery charge - 0.76 μC
I
RRM
Reverse recovery current - 10.3 A
t
rr
Reverse recovery time
I
SD
= 10 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
J
= 150 °C
(see Figure 14. Test circuit for inductive
load switching and diode recovery times)
- 174 ns
Q
rr
Reverse recovery charge - 1.08 μC
I
RRM
Reverse recovery current - 12.5 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
STD10NF30
Electrical characteristics
DS10271 - Rev 2
page 4/16
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
ID
VDS(V)
(A)
Operation in this area is
Limited by max RDS(on)
10µs
1ms
100µs
10
-1
Tj=175 °C
Tc=25 °C
Single pulse
10ms
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
AM18166v1
Figure 2. Thermal impedance
Figure 3. Output characteristics
ID
25
15
5
0
0
4
VDS(V)
8
(A)
12
5V
6V
VGS=10V
10
20
4V
7V
16
AM06477v3
Figure 4. Transfer characteristics
ID
20
10
0
0 4
VGS(V)
6
(A)
3 5 7
5
15
25
VDS=15V
AM06478v3
Figure 5. Static drain-source on-resistance
RDS(on)
0.34
0.3
0.26
2 10
ID(A)
(Ω)
6 14
0.38
VGS=10V
18
0.42
AM15981v3
Figure 6. Gate charge vs gate-source voltage
VGS
6
4
2
0
0 10 Qg(nC)
(V)
8
15 20
10
VDD=240V
ID=10A
150
100
50
0
200
250
5 25
VDS
(V)
VDS
AM06479v3
STD10NF30
Electrical characteristics (curves)
DS10271 - Rev 2
page 5/16
Figure 7. Capacitance variations
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
AM06481v3
Figure 8. Normalized gate threshold voltage vs
temperature
VGS(th)
1.0
0.8
0.7
0.6
-75
TJ(°C)
(norm)
-25
1.1
75
25
125
ID=250µA
0.9
AM06483v3
Figure 9. Normalized on-resistance vs temperature
RDS(on)
1.75
0.25
-75
TJ(°C)
(norm)
-25
75
25
125
0.75
1.25
2.25
2.75
ID=5A
VGS=10V
AM06484v3
Figure 10. Normalized V
(BR)DSS
vs temperature
V(BR)DSS
-75
TJ(°C)
(norm)
-25
75
25
125
0.9
0.95
1
1.05
1.1
ID=1mA
AM15982v3
Figure 11. Source-drain diode forward characteristics
VSD
ISD(A)
(V)
2 106
0.5
0.6
0.7
0.8
TJ=-50°C
TJ=175°C
TJ=25°C
0.9
1
1814
AM15720v3
STD10NF30
Electrical characteristics (curves)
DS10271 - Rev 2
page 6/16
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STD10NF30

Mfr. #:
Buy STD10NF30
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CHANNEL 300V 10A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet