IRF8736PBF

www.irf.com 1
08/1/07
IRF8736PbF
HEXFET
®
Power MOSFET
Notes through are on page 9
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for R
G
l Lead -Free
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
PD - 97120
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead
––– 20 °C/W
R
θJA
Junction-to-Ambient
––– 50
Max.
18
14.4
144
± 20
30
-55 to + 150
2.5
0.02
1.6
V
DSS
R
DS(on)
max
Qg Typ.
30V
4.8m
@V
GS
= 10V
17nC
IRF8736PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.9 4.8
m
––– 5.5 6.8
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.1 ––– mVC
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 52 ––– –– S
Q
g
Total Gate Charge ––– 17 26
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 4.4 ––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.9 –– nC
Q
gd
Gate-to-Drain Charge ––– 5.8 ––
Q
godr
Gate Charge Overdrive ––– 4.9 –– See Fig. 16
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
––– 7.7 ––
Q
oss
Output Charge ––– 7.1 –– nC
R
G
Gate Resistance ––– 1.3 2.2
t
d(on)
Turn-On Delay Time ––– 12 –––
t
r
Rise Time ––– 15 –––
t
d(off)
Turn-Off Delay Time –– 13 –– ns
t
f
Fall Time –– 7.5 –––
C
iss
Input Capacitance ––– 2315 ––
C
oss
Output Capacitance ––– 449 ––– pF
C
rss
Reverse Transfer Capacitance ––– 219 –––
Avalanche Characteristics
Parameter Units
E
AS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
I
AR
A
va
l
anc
h
e
C
urrent
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current ––– ––– 3.1
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 144
(
Bod
y
Diode
)
V
SD
Diode Forward Voltage –– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 16 24 ns
Q
rr
Reverse Recovery Charge ––– 19 29 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
See Fig. 14
Max.
126
14.4
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 18A
MOSFET symbol
V
DS
= 10V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 14.4A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
T
J
= 25°C, I
F
= 14.4A, V
DD
= 10V
di/dt = 300A/
s
T
J
= 25°C, I
S
= 14.4A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 14.4A
V
GS
= 4.5V
Typ.
–––
V
DS
= V
GS
, I
D
= 50µA
R
G
= 1.8
V
DS
= 15V, I
D
= 14.4A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
–––
I
D
= 14.4A
V
GS
= 0V
V
DS
= 15V
IRF8736PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
2.3V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 150°C
2.3V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
1.0 2.0 3.0 4.0 5.0
V
GS
, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V
DS
= 15V
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 18A
V
GS
= 10V

IRF8736PBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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