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IRF8736PBF
P1-P3
P4-P6
P7-P9
IRF8736PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-to-
Sour
ce Vol
tage (V
)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, S
ource-to-
Drai
n Vol
tage (V
)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 150°
C
V
GS
= 0V
0.1
1
10
100
V
DS
, D
rai
n-to-
Sour
ce Vol
tage (V
)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
A
= 25°
C
Tj
= 150°
C
Si
ngle Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
0
4
8
12
16
20
Q
g
, Tota
l Gate
Cha
rge
(nC)
0
1
2
3
4
5
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 14.
4A
IRF8736PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
25
50
75
100
125
150
T
A
, A
mbient T
emperatur
e (°C
)
0
4
8
12
16
20
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
1
, R
ectangul
ar Pul
se Durati
on (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1/t2
2. P
eak Tj =
P dm x Zt
hja +
Tc
Ri
(°
C/W
)
τι
(sec)
1.39
6574
0.00
0246
7.20
6851
0.03
7927
2
7.12
7
8
1
.0
882
14.2
6877
30.3
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
τ
a
τ
4
τ
4
R
4
R
4
-75
-50
-25
0
25
50
75
100
125
150
T
J
, T
emperatur
e ( °C )
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 50µA
IRF8736PbF
6
www.irf.com
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
Fig 13.
Gate Charge Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.
01
Ω
t
p
D.U.
T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25
50
75
100
125
150
St
arti
ng T
J
, Junct
ion Temper
ature (°
C)
0
100
200
300
400
500
600
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
1.2
8A
1.7
5A
BOTTOM
14.4A
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms
V
DS
Pulse
Width
≤
1
µs
Duty
Factor
≤ 0.1
%
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
P1-P3
P4-P6
P7-P9
IRF8736PBF
Mfr. #:
Buy IRF8736PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC
Lifecycle:
New from this manufacturer.
Delivery:
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