RJP60F5DPK-01#T0

R07DS0757EJ0100Rev.1.00 Page 1 of 6
May 31, 2012
Preliminary Datasheet
RJP60F5DPK
600V - 40A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.37 V typ. (I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
High speed switching
t
f
= 85 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
1. Gate
2. Collecto
r
3. Emitter
4. Collecto
r
C
G
E
RENESAS Package code:
PRSS0004ZE-A
(Package name:
TO-3P)
1
2
3
4
Absolute Maximum Ratings
(Tc = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage V
CES
600 V
Gate to emitter voltage V
GES
±30 V
Tc = 25 °C I
C
80 A Collector current
Tc = 100 °C I
C
40 A
Collector peak current ic(peak)
Note1
160 A
Collector dissipation P
C
260.4 W
Junction to case thermal impedance j-c 0.48 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse width limited by safe operating area.
R07DS0757EJ0100
Rev.1.00
May 31, 2012
RJP60F5DPK Preliminary
R07DS0757EJ0100Rev.1.00 Page 2 of 6
May 31, 2012
Electrical Characteristics
(Tj = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
100 A V
CE
= 600V, V
GE
= 0
Gate to emitter leak current I
GES
±1 A V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
4 8 V V
CE
= 10V, I
C
= 1 mA
V
CE(sat)
1.37 1.8 V I
C
= 40 A, V
GE
= 15V
Note2
Collector to emitter saturation voltage
V
CE(sat)
1.7 V I
C
= 80 A, V
GE
= 15V
Note2
Input capacitance Cies 2780 pF
Output capacitance Coes 100 pF
Reverse transfer capacitance Cres 43 pF
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
Total gate charge Qg 74 nC
Gate to emitter charge Qge 24 nC
Gate to collector charge Qgc 26 nC
V
GE
= 15 V
V
CC
= 300 V
I
C
= 40 A
t
d(on)
53 ns
t
r
77 ns
t
d(off)
90 ns
Switching time
t
f
85 ns
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note3
,
Inductive load
Notes: 2. Pulse test
RJP60F5DPK Preliminary
R07DS0757EJ0100Rev.1.00 Page 3 of 6
May 31, 2012
Main Characteristics
Typical Output Characteristics
160
120
80
40
12345
Collector Current I
C
(A)
0
0
Collector to Emitter Voltage V
CE
(V)
160
120
80
40
0
Pulse Test
Ta = 25
°
C
Pulse Test
Ta = 25
°
C
9 V
V
GE
= 8 V
8.5 V
9.5 V
10.5 V
15 V
13 V
10 V
11 V
Typical Transfer Characteristics
Collector Current I
C
(A)
2 46810
12
V
CE
= 10 V
Pulse Test
Gate to Emitter Voltage V
GE
(V)
2C
25°C
Tc = 75°C
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Maximum Safe Operation Area
1000
100
1
10
0.1
1 10010 1000
Tc = 25°C
Single pulse
100 μs
PW = 10 μs
1.0
2.2
1.8
1.4
2.6
3.0
6810 12 14 16 20
18
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
I
C
= 20 A
40 A
80 A
Ta = 25
°
C
Pulse Test
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
1.0
1.2
1.4
1.6
1.8
2.0
2.2
25 0257512550 100 150
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
V
GE
= 15 V
Pulse Test
Junction Temparature Tj (
°
C)
40 A
20 A
I
C
= 80 A
0
6
4
2
8
10
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
25 0257512550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
V
CE
= 10 V
Pulse Test
Junction Temparature Tj (
°
C)
1 mA
I
C
= 10 mA

RJP60F5DPK-01#T0

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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