RJP60F5DPK Preliminary
R07DS0757EJ0100Rev.1.00 Page 4 of 6
May 31, 2012
Capacitance C (pF)
1
10
100
1000
10000
010050150 200 250
300
Cies
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
20 40 60 80
100
I
C
= 40 A
Ta = 25
°
C
V
GE
V
CE
V
CC
= 600 V
300 V
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
V
CC
= 300 V
600 V
10
1
0.1
110100
Collector Current I
C
(A)
(Inductive load)
5025 15075 1251005025 15075 125100
Switching Characteristics (Typical) (3)
100
1000
1
1000
100
10
10
t
d(off)
t
d(on)
t
r
t
f
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
Switching Characteristics (Typical) (4)
Eoff
Eon
Swithing Energy Losses E (mJ)
Switching Times t (ns)
Swithing Energy Losses E (mJ)
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω
Eon includes the diode recovery
t
d(off)
t
d(on)
t
r
V
CC
= 400 V, V
GE
= 15 V
Rg = 5 Ω, Tc = 150
°
C
t
r
includes the diode recovery
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω
t
r
includes the diode recovery
t
f
110100
1
10
0.01
0.1
V
CC
= 400 V, V
GE
= 15 V
Rg = 5 Ω, Tc = 150
°
C
Eon includes the diode recovery
Eoff
Eon
