SRV05-4MR6T1G

SRV054MR6
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
Figure 6. Junction Capacitance vs Reverse Voltage
5.0
2.5
0.0
01
V
BR
, REVERSE VOLTAGE (V)
JUNCTION CAPACITANCE (pF)
2345
I/O lines
I/OGround
4.5
2.0
4.0
1.5
3.5
1.0
3.0
0.5
Figure 7. Clamping Voltage vs. Peak Pulse Current
(8 x 20 ms Waveform)
30
15
0
02
PEAK PULSE CURRENT (A)
CLAMPING VOLTAGE (V)
468 12
25
10
20
5
10
SRV054MR6
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5
APPLICATIONS INFORMATION
The new SRV054MR6 is a low capacitance TVS diode
array designed to protect sensitive electronics such as
communications systems, computers, and computer
peripherals against damage due to ESD events or transient
overvoltage conditions. Because of its low capacitance, it
can be used in high speed I/O data lines. The integrated
design of the SRV054MR6 offers surge rated, low
capacitance steering diodes and a TVS diode integrated in a
single package (TSOP6). If a transient condition occurs,
the steering diodes will drive the transient to the positive rail
of the power supply or to ground. The TVS device protects
the power line against overvoltage conditions to avoid
damage to the power supply and any downstream
components.
SRV054MR6 Configuration Options
The SRV054MR6 is able to protect up to four data lines
against transient overvoltage conditions by driving them to
a fixed reference point for clamping purposes. The steering
diodes will be forward biased whenever the voltage on the
protected line exceeds the reference voltage (Vf or V
CC
+
Vf). The diodes will force the transient current to bypass the
sensitive circuit.
Data lines are connected at pins 1, 3, 4 and 6. The negative
reference is connected at pin 2. These pins must be
connected directly to ground by using a ground plane to
minimize the PCB’s ground inductance. It is very important
to reduce the PCB trace lengths as much as possible to
minimize parasitic inductances.
Option 1
Protection of four data lines and the power supply using
V
CC
as reference.
6
5
4
1
2
3
I/O 1
I/O 2
I/O 3
I/O 4
V
CC
For this configuration, connect pin 5 directly to the
positive supply rail (V
CC
), the data lines are referenced to
the supply voltage. The internal TVS diode prevents
overvoltage on the supply rail. Biasing of the steering diodes
reduces their capacitance.
Option 2
Protection of four data lines with bias and power supply
isolation resistor.
V
CC
10 k
6
5
4
1
2
3
I/O 1
I/O 2
I/O 3
I/O 4
The SRV054MR6 can be isolated from the power supply
by connecting a series resistor between pin 5 and V
CC
. A
10 kW resistor is recommended for this application. This
will maintain a bias on the internal TVS and steering diodes,
reducing their capacitance.
Option 3
Protection of four data lines using the internal TVS diode
as reference.
6
5
4
1
2
3
I/O 1
I/O 2
I/O 3
I/O 4
NC
In applications lacking a positive supply reference or
those cases in which a fully isolated power supply is
required, the internal TVS can be used as the reference. For
these applications, pin 5 is not connected. In this
configuration, the steering diodes will conduct whenever the
voltage on the protected line exceeds the working voltage of
the TVS plus one diode drop (Vc = Vf + V
TVS
).
ESD Protection of Power Supply Lines
When using diodes for data line protection, referencing to
a supply rail provides advantages. Biasing the diodes
reduces their capacitance and minimizes signal distortion.
Implementing this topology with discrete devices does have
disadvantages. This configuration is shown below:
SRV054MR6
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6
V
CC
D1
D2
Data Line
I
ESDpos
I
ESDneg
VF + V
CC
VF
I
ESDpos
I
ESDneg
Power
Supply
Protected
Device
Looking at the figure above, it can be seen that when a
positive ESD condition occurs, diode D1 will be forward
biased while diode D2 will be forward biased when a
negative ESD condition occurs. For slower transient
conditions, this system may be approximated as follows:
For positive pulse conditions:
Vc = V
CC
+ Vf
D1
For negative pulse conditions:
Vc = Vf
D2
ESD events can have rise times on the order of some
number of nanoseconds. Under these conditions, the effect
of parasitic inductance must be considered. A pictorial
representation of this is shown below.
V
CC
D1
D2
Data Line
I
ESDpos
I
ESDneg
V
C
= V
CC
+ Vf + (L diESD/dt)
I
ESDpos
I
ESDneg
Power
Supply
Protected
Device
V
C
= Vf (L diESD/dt)
An approximation of the clamping voltage for these fast
transients would be:
For positive pulse conditions:
Vc = V
CC
+ Vf + (L di
ESD
/dt)
For negative pulse conditions:
Vc = Vf – (L di
ESD
/dt)
As shown in the formulas, the clamping voltage (Vc) not
only depends on the Vf of the steering diodes but also on the
L d
iESD
/dt factor. A relatively small trace inductance can
result in hundreds of volts appearing on the supply rail. This
endangers both the power supply and anything attached to
that rail. This highlights the importance of good board
layout. Taking care to minimize the effects of parasitic
inductance will provide significant benefits in transient
immunity.
Even with good board layout, some disadvantages are still
present when discrete diodes are used to suppress ESD
events across datalines and the supply rail. Discrete diodes
with good transient power capability will have larger die and
therefore higher capacitance. This capacitance becomes
problematic as transmission frequencies increase. Reducing
capacitance generally requires reducing die size. These
small die will have higher forward voltage characteristics at
typical ESD transient current levels. This voltage combined
with the smaller die can result in device failure.
The ON Semiconductor SRV054MR6 was developed to
overcome the disadvantages encountered when using
discrete diodes for ESD protection. This device integrates a
TVS diode within a network of steering diodes.
D1
D2
D3
D4
D5
D6
D7
D8
0
Figure 8. SRV054MR6 Equivalent Circuit
During an ESD condition, the ESD current will be driven
to ground through the TVS diode as shown below.
V
CC
D1
D2
Data Line
I
ESDpos
Power
Supply
Protected
Device
The resulting clamping voltage on the protected IC will
be:
Vc = VF + V
TVS
.
The clamping voltage of the TVS diode is provided in
Figure 7 and depends on the magnitude of the ESD current.
The steering diodes are fast switching devices with unique
forward voltage and low capacitance characteristics.

SRV05-4MR6T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors LOW CAP TSOP-6 SMB SPCL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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