1997 Dec 05 3
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage 25 V
V
DGO
drain-gate voltage open source 25 V
V
GSO
gate-source voltage open drain 25 V
I
D
drain current 10 mA
I
G
forward gate current (DC) 5mA
P
tot
total power dissipation T
amb
40 C; note 1; see Fig.2 250 mW
T
stg
storage temperature 65 +150 C
T
j
operating junction temperature 150 C
Fig.2 Power derating curve.
handbook, halfpage
0
T
amb
(°C)
P
tot
(mW)
300
200
100
0
40 200
80 120 160
MDA245
THERMAL CHARACTERISTICS
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 430 K/W
