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BFR30,215

P1-P3P4-P6P7-P9P10-P12P13-P13
1997 Dec 05 4
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
CHARACTERISTICS
T
j
=25C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
GSS
gate cut-off current V
DS
=0; V
GS
= 10 V 0.2 nA
I
DSS
drain current V
GS
=0; V
DS
=10V
BFR30 4 10 mA
BFR31 1 5 mA
V
GS
gate-source voltage I
D
=1mA; V
DS
=10V
BFR30 0.7 3V
BFR31 0 1.3 V
V
GS
gate-source voltage I
D
=50A; V
DS
=10V
BFR30 4V
BFR31 2V
V
GSoff
gate-source cut-off voltage I
D
=0.5nA; V
DS
=10V
BFR30 5V
BFR31 2.5 V
y
fs
common-source transfer admittance I
D
=1mA; V
DS
=10V; f=1kHz;
T
amb
=25C
BFR30 1 4 mS
BFR31 1.5 4.5 mS
y
fs
common-source transfer admittance I
D
=200A; V
DS
=10V; f=1kHz;
T
amb
=25C
BFR30 0.5 mS
BFR31 0.75 mS
y
os
common source output admittance I
D
=1mA; V
DS
=10V; f=1kHz
BFR30 40 S
BFR31 25 S
y
os
common source output admittance I
D
=200A; V
DS
=10V; f=1kHz
BFR30 20 S
BFR31 15 S
C
is
input capacitance V
DS
=10V; f=1MHz
I
D
=1mA 4pF
I
D
=0.2nA 4pF
C
rs
feedback capacitance V
DS
=10V; f=1MHz; T
amb
=25C
I
D
=1mA 1.5 pF
I
D
=200A 1.5 pF
V
n
equivalent input noise voltage I
D
=200A; V
DS
=10V;
B=0.6to100Hz
0.5 V
1997 Dec 05 5
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.3 Input characteristics.
BFR30.
V
DS
=10V; T
j
=25C.
handbook, halfpage
−4
10
8
2
6
4
0
−3 −20
max
typ
min
V
GS
(V)
I
D
(mA)
−1
MDA657
Fig.4 Output characteristics; typical values.
BFR30.
T
j
=25C.
handbook, halfpage
010
10
0
2
4
6
8
2468
MDA658
V
DS
(V)
I
D
(mA)
V
GS
= 0 V
−0.5
−1.0
−1.5
−2.0
Fig.5 Input characteristics.
BFR31.
V
DS
=10V; T
j
=25C.
handbook, halfpage
−50
5
0
1
2
3
4
−4 −3 −2 −1
MDA659
max
typ
min
V
GS
(V)
I
D
(mA)
Fig.6 Output characteristics; typical values.
BFR31.
T
j
=25C.
handbook, halfpage
010
5
0
1
2
3
4
2468
MDA660
V
DS
(V)
I
D
(mA)
V
GS
= 0 V
−0.2
−0.4
−0.6
−0.8
−1
−1.2
1997 Dec 05 6
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.7 Drain current as a function of junction
temperature; typical values.
BFR30.
V
DS
=10V.
handbook, halfpage
25 50 75 125
I
D
(mA)
6
4
2
0
100
MDA661
T
j
(°C)
V
GS
= 0 V
−0.5
−1.0
−1.5
−2.0
Fig.8 Drain current as a function of junction
temperature; typical values.
BFR31.
V
DS
=10V.
handbook, halfpage
−1
−1.2
25 50 75 125
I
D
(mA)
6
4
2
0
100
MDA662
T
j
(°C)
−0.2
−0.4
−0.6
−0.8
V
GS
=
0 V
Fig.9 Gate cut-off current as a function of junction
temperature; typical values.
V
GS
= 10 V; V
DS
=0.
handbook, halfpage
20010050
I
GSS
(nA)
0 150
T
j
(°C)
10
1
10
−1
10
−2
10
−3
MDA656
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
I
D
= 0.5 nA; V
DS
=10V; V
GS
=0; T
j
=25C.
handbook, halfpage
010
−6
0
−2
−4
2
I
DSS
(mA)
V
GS(off)
(V)
468
MDA663
BFR31
BFR30
P1-P3P4-P6P7-P9P10-P12P13-P13

BFR30,215

Mfr. #:
Buy BFR30,215
Manufacturer:
NXP Semiconductors
Description:
JFET N-CH 25V 10mA
Lifecycle:
New from this manufacturer.
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