NXP Semiconductors
BSS138AKA
60 V, single N-channel Trench MOSFET
BSS138AKA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 29 April 2015 7 / 16
Symbol Parameter Conditions Min Typ Max Unit
t
f
fall time - 22 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 115 mA; V
GS
= 0 V; T
j
= 25 °C 0.47 0.7 1.2 V
V
DS
(V)
0 431 2
017aaa663
0.2
0.3
0.1
0.4
0.5
I
D
(A)
0
10 V
4.5 V
3.5 V
V
GS
= 2 V
2.5 V
3 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa664
10
-4
10
-5
10
-3
I
D
(A)
10
-6
V
GS
(V)
0 2.01.50.5 1.0
min typ max
T
j
= 25 °C; V
DS
= 5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 0.50.40.2 0.30.1
017aaa665
4
6
2
8
10
R
DSon
(Ω)
0
2 V 2.5 V 3 V
3.5 V
4.5 V
V
GS
= 10 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 1084 62
017aaa666
4
8
12
R
DSon
(Ω)
0
T
j
= 150 °C
T
j
= 25 °C
I
D
= 0.15 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
