AOD609
Symbol Min Typ Max Units
BV
DSS
40 V
1
T
J
=55°C
5
I
GSS
±100
nA
V
GS(th)
1.7 2.5 3 V
I
D(ON)
30 A
24 30
T
J
=125°C
37 46
31 40
g
FS
25 S
V
SD
0.76 1 V
I
S
2A
C
iss
516 650 pF
C
oss
82 pF
C
rss
43 pF
R
g
4.6 6.9 Ω
Q
g
(10V)
8.3 10.8 nC
Q
gs
2.3 nC
Q
gd
1.6 nC
t
D(on)
6.4 ns
t
r
3.6 ns
t
D(off)
16.2 ns
t
f
6.6 ns
t
rr
18 24
ns
Q
rr
10 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
I
F
=12A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=12A, dI/dt=100A/µs
V
GS
=0V, V
DS
=20V, f=1MHz
Output Capacitance
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=40V, V
GS
=0V
N Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
µA
Gate-Body leakage current V
DS
=0V, V
GS
= ±20V
mΩ
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
On state drain current V
GS
=10V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=4.5V, I
D
=8A
V
DS
=5V, I
D
=12A
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=12A
Diode Forward Voltage
V
GS
=10V, V
DS
=20V, R
L
=1.4Ω,
R
GEN
=3Ω
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=20V,
I
D
=12A
Input Capacitance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C. The power dissipation P
DSM
and current rating I
DSM
are based
on T
J(MAX)
=150°C, using the steady state junction-to-ambient thermal resistance.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation li
for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1
ST
2008).
Rev4: Au
200
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
