AOD609
Symbol Min Typ Max Units
BV
DSS
-40 V
-1
T
J
=55°C
-5
I
GSS
±100
nA
V
GS(th)
-1.7 -2 -3 V
I
D(ON)
-30 A
36 45
T
J
=125°C
52 65
51 66
g
FS
22 S
V
SD
-0.76 -1 V
I
S
-2 A
C
iss
900 1125 pF
C
oss
97 pF
C
rss
68 pF
R
g
14 Ω
Q
g
(-10V)
16.2 21 nC
Q
g
(-4.5V)
7.2 9.4 nC
Q
gs
3.8 nC
Q
gd
3.5 nC
t
D(on)
6.2 ns
t
r
8.4 ns
t
D(off)
44.8 ns
t
f
41.2 ns
t
rr
21 27
ns
Q
rr
14 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
= -12A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
I
F
= -12A, dI/dt=100A/µs
Total Gate Charge
V
GS
= -10V, V
DS
= -20V,
I
D
= -12A
V
GS
= -10V, V
DS
= -20V, R
L
=1.4Ω,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Total Gate Charge
Gate resistance
Output Capacitance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Diode Forward Voltage I
S
= -1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
= -20V, f=1MHz
mΩ
V
DS
= -5V, I
D
= -12A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
= -10V, I
D
= -12A
V
GS
= -4.5V, I
D
= -8A
Gate Threshold Voltage V
DS
=V
GS
I
D
= -250µA
On state drain current V
GS
= -10V, V
DS
= -5V
µA
Gate-Body leakage current V
DS
=0V, V
GS
= ±20V
Drain-Source Breakdown Voltage I
D
= -250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -40V, V
GS
=0V
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C. The power dissipation P
DSM
and current rating I
DSM
ar
based on T
J(MAX)
=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1
ST
2008).
Rev4: Au
200
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
