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BSS138W E6433

P1-P3P4-P6P7-P9
BSS138W
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
0.28 A
T
A
=70 °C
0.22
Pulsed drain current
I
D,pulse
T
A
=25 °C
1.12
Reverse diode dv /dt dv /dt
I
D
=0.28 A, V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
ESD
class 0 (<250V)
(JESD22-A114-HBM)
Power dissipation
P
tot
T
A
=25 °C
0.50 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
V
DS
60 V
R
DS(on),max
3.5
Ω
I
D
0.28 A
Product Summary
PG-SOT-323
Type Package Tape and Reel Marking
BSS138W PG-SOT-323 H
6327: 3000
/
SWs
BSS138W PG-SOT-323 H
6433: 10000
Rev. 2.4
3 page 1 2011-07-12
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
SWs
BSS138W
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R
thJA
- - 250 K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=250 µA
60 - - V
Gate threshold voltage
V
GS(th)
V
GS
=V
DS
, I
D
=26 µA
0.6 1.0 1.4
Drain-source leakage current
I
D (off)
V
DS
=60 V,
V
GS
=0 V, T
j
=25 °C
- - 0.1 µA
V
DS
=60 V,
V
GS
=0 V, T
j
=150 °C
--5
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 10 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=0.03 A
- 3 4.0
Ω
V
GS
=4.5 V, I
D
=0.16 A
- 3.2 6
V
GS
=10 V, I
D
=0.2 A
- 2.1 3.5
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.22 A
0.12 0.23 - S
Values
Rev. 2.43 page 2 2011-07-12
BSS138W
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
-3243pF
Output capacitance
C
oss
- 7.2 10
Reverse transfer capacitance
C
rss
- 2.8 4.2
Turn-on delay time
t
d(on)
- 2.2 3.3 ns
Rise time
t
r
- 3.0 4.5
Turn-off delay time
t
d(off)
- 6.7 10
Fall time
t
f
- 8.2 12
Gate Charge Characteristics
Gate to source charge
Q
gs
- 0.10 0.13 nC
Gate to drain charge
Q
gd
- 0.3 0.4
Gate charge total
Q
g
- 1.0 1.5
Gate plateau voltage
V
plateau
- 3.2 - V
Reverse Diode
Diode continous forward current
I
S
- - 0.28 A
Diode pulse current
I
S,pulse
- - 1.12
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=0.28 A,
T
j
=25 °C
- 0.85 1.2 V
Reverse recovery time
t
rr
- 8.3 12.4 ns
Reverse recovery charge
Q
rr
- 3.3 5 nC
V
R
=30 V, I
F
=0.28 A,
di
F
/dt =100 A/µs
T
A
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=30 V, V
GS
=10 V,
I
D
=0.2 A, R
G
=6 Ω
V
DD
=48 V, I
D
=0.2 A,
V
GS
=0 to 10 V
Rev. 2.43 page 3 2011-07-12
P1-P3P4-P6P7-P9

BSS138W E6433

Mfr. #:
Buy BSS138W E6433
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 280MA SOT-323
Lifecycle:
New from this manufacturer.
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