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BSS138W E6433
P1-P3
P4-P6
P7-P9
BSS138W
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
Z
thJA
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
100 ms
10 µs
100 µs
1 ms
10 ms
DC
10
1
10
0
10
-1
10
-2
10
-3
1
10
100
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
2
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
3
10
2
10
1
10
0
10
-1
10
-2
t
p
[s]
Z
thJA
[K/W]
0
0.1
0.2
0.3
0.4
0.5
0
40
80
120
160
T
A
[°C]
P
tot
[W]
0
0.05
0.1
0.15
0.2
0.25
0.3
0
40
80
120
160
T
A
[°C]
I
D
[A]
Rev. 2.
4
3
page 4
20
11
-0
7
-1
2
BSS138W
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
10 V
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
I
D
[A]
R
DS(on)
[
Ω
]
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
V
GS
[V]
I
D
[A]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00
0.10
0.20
0.30
0.40
I
D
[A]
g
fs
[S]
V 2.9
V 3.2
V 3.5
V 4
V 4.5
V 5
V 7
V 10
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
V
DS
[V]
I
D
[A]
Rev. 2.
4
3
page 5
20
11
-0
7
-1
2
BSS138W
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=0.2 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
DS
=V
GS
;
I
D
=26 µA
parameter:
I
D
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz; T
j
=25°C
I
F
=f(
V
SD
)
parameter:
T
j
typ
%98
0
2
4
6
8
-60
-20
20
60
100
140
T
j
[°C]
R
DS(on)
[
Ω
]
typ
%98
%2
0
0.4
0.8
1.2
1.6
2
-60
-20
20
60
100
140
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
2
10
1
10
0
01
0
2
0
3
0
V
DS
[V]
C
[pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
0
10
-1
10
-2
10
-3
0
0.4
0.8
1.2
1.6
2
V
SD
[V]
I
F
[A]
Rev. 2.
4
3
page 6
20
11
-0
7
-1
2
P1-P3
P4-P6
P7-P9
BSS138W E6433
Mfr. #:
Buy BSS138W E6433
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 280MA SOT-323
Lifecycle:
New from this manufacturer.
Delivery:
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