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Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
Vishay Siliconix
Si4569DY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
= 10 thru 3 V
2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
048121620
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (Ω)
0.018
0.020
0.022
0.024
0.026
0.028
0.030
0
2
4
6
8
10
0.0 4.4 8.8 13.2 17.6 22.0
- Gate-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
V
GS
I
D
= 5 A
V
DS
= 20 V
V
DS
= 10 V
V
DS
= 30 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
280
560
840
1120
1400
0 8 16 24 32 40
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 5 A