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SI4569DY-T1-E3

P1-P3P4-P6P7-P9P10-P12
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
7
Vishay Siliconix
Si4569DY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 100010
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 110 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
11010
-1
10
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
www.vishay.com
8
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
Vishay Siliconix
Si4569DY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 thru 4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
048121620
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (Ω)
0.015
0.020
0.025
0.030
0.035
0.040
0
2
4
6
8
10
0 9 18 27 36 45
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
= 6 A
V
DS
= 20 V
V
DS
= 10 V
V
DS
= 30 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.8 1.6 2.4 3.2 4.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
500
1000
1500
2000
2500
0 8 16 24 32 40
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 6 A
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
9
Vishay Siliconix
Si4569DY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
- Source Current (A)I
S
V
SD
- Source-to-Drain Voltage (V)
100
10
1
0.3 0.6 0.9 1.2 1.5
T
J
= 150 °C
T
J
= 25 °C
0.0
- 0.3
- 0.1
0.1
0.3
0.5
0.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
Variance (V)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.03
0.06
0.09
0.12
0.15
012345678910
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
A
= 25 °C
T
A
= 125 °C
I
D
= 6 A
0
10
20
30
40
50
Power (W)
Time (s)
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)*
1 ms
10 ms
100 ms
DC
1 s
10 s
0.0
T
A
= 25 °C
Single Pulse
>
P1-P3P4-P6P7-P9P10-P12

SI4569DY-T1-E3

Mfr. #:
Buy SI4569DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4564DY-T1-GE3
Lifecycle:
New from this manufacturer.
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