SIS902DN-T1-GE3 Datasheet SIS902DN-T1-GE3 | P1-P3

Vishay Siliconix

SiS902DN

Document Number: 64804

S09-0661-Rev. A, 20-Apr-09

www.vishay.com

1

Dual N-Channel 75-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• Low Thermal Resistance PowerPAK

®

Package with Small Size and Low 1.07 mm

Profile

• 100 % R

g

Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• POL

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A) Q

g

(Typ.)

75

0.186 at V

GS

= 10 V

4

e

2.1 nC

0.228 at V

GS

= 4.5 V

4

e

PowerPAK 1212-8

Bottom View

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

3.30 mm

Ordering Information: SiS902DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

1

D

1

S

1

N-Channel MOSFET

G

2

D

2

S

2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

75

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

4

e

A

T

C

= 70 °C

4

e

T

A

= 25 °C

3

a, b

T

A

= 70 °C

2.4

a, b

Pulsed Drain Current

I

DM

8

Avalanche Current

L = 0.1 mH

I

AS

2

Single-Pulse Avalanche Energy E

AS

0.2 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

15.4

W

T

C

= 70 °C

9.9

T

A

= 25 °C

3.1

a, b

T

A

= 70 °C

2

a, b

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

c, d

260

www.vishay.com

2

Document Number: 64804

S09-0661-Rev. A, 20-Apr-09

Vishay Siliconix

SiS902DN

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 78 °C/W.

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, b

t ≤ 10 s

R

thJA

32 40

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

6.4 8.1

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

75 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

81

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

- 5

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

1.2 2.5 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 75 V, V

GS

= 0 V

1

µA

V

DS

= 75 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

8A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 3 A

0.155 0.186

Ω

V

GS

= 4.5 V, I

D

= 2.7 A

0.190 0.228

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 3 A

10 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 38 V, V

GS

= 0 V, f = 1 MHz

175

pFOutput Capacitance

C

oss

30

Reverse Transfer Capacitance

C

rss

18

Total Gate Charge

Q

g

V

DS

= 38 V, V

GS

= 10 V, I

D

= 3 A

3.9 6

nC

V

DS

= 38 V, V

GS

= 4.5 V, I

D

= 3 A

2.1 3.2

Gate-Source Charge

Q

gs

0.8

Gate-Drain Charge

Q

gd

0.6

Gate Resistance

R

g

f = 1 MHz 0.4 2 4 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 38 V, R

L

= 16 Ω

I

D

≅ 2.4 A, V

GEN

= 4.5 V, R

g

= 1 Ω

17 26

ns

Rise Time

t

r

18 27

Turn-Off Delay Time

t

d(off)

12 20

Fall Time

t

f

918

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 38 V, R

L

= 16 Ω

I

D

≅ 2.4 A, V

GEN

= 10 V, R

g

= 1 Ω

510

Rise Time

t

r

816

Turn-Off Delay Time

t

d(off)

10 20

Fall Time

t

f

610

Document Number: 64804

S09-0661-Rev. A, 20-Apr-09

www.vishay.com

3

Vishay Siliconix

SiS902DN

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

4

A

Pulse Diode Forward Current

a

I

SM

8

Body Diode Voltage

V

SD

I

S

= 2 A

0.85 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 2.4 A, dI/dt = 100 A/µs, T

J

= 25 °C

20 30 ns

Body Diode Reverse Recovery Charge

Q

rr

17 26 nC

Reverse Recovery Fall Time

t

a

15

ns

Reverse Recovery Rise Time

t

b

5

SIS902DN-T1-GE3

SIS902DN-T1-GE3

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