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SIS902DN-T1-GE3

P1-P3P4-P6P7-P8
www.vishay.com
4
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
Vishay Siliconix
SiS902DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=10V thru 5 V
V
GS
=3V
V
GS
=4V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.10
0.15
0.20
0.25
0.30
02468
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
012345
I
D
=3A
V
DS
=60V
V
DS
=38V
V
DS
=19V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0.0
0.5
1.0
1.5
2.0
01234
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
50
100
150
200
250
0 1530456075
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V;I
D
=2.7A
V
GS
=10V;I
D
=3A
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
www.vishay.com
5
Vishay Siliconix
SiS902DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.5 1.0 1.5
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1.2
1.5
1.8
2.1
2.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.0
0.1
0.2
0.3
0.4
0.5
012345678 910
I
D
=3A
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
10
0.1
0.1 1 10
1
T
A
= 25 °C
Single Pulse
1ms
0.01
1s
10 s
100
100 µs
Limited byR
DS(on)*
10 ms
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
DC
www.vishay.com
6
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
Vishay Siliconix
SiS902DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Case
0
5
10
15
20
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
P1-P3P4-P6P7-P8

SIS902DN-T1-GE3

Mfr. #:
Buy SIS902DN-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 75V 4A PPAK 1212-8
Lifecycle:
New from this manufacturer.
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