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SMP80MC-320

P1-P3P4-P6P7-P9P10-P11
Characteristics SMP80MC
4/11 Doc ID 9702 Rev 5
Table 4. Electrical characteristics - values (T
amb
= 25 °C)
Types
I
RM
@ V
RM
I
R
@ V
R
Dynamic
V
BO
(1)
1. See Figure 10: Test circuit 1 for dynamic I
BO
and V
BO
parameters
Static
V
BO
@ I
BO
(2)
2. See Figure 11: Test circuit 2 for I
BO
and V
BO
parameters
I
H
(3)
3. See Figure 12: Test circuit 3 for dynamic I
H
parameter
C
(4)
4. V
R
= 50 V bias, V
RMS
= 1 V, F= 1 MHz
C
(5)
5. V
R
= 2 V bias, V
RMS
= 1 V, F = 1 MHz
max. max. max. max. max. min. typ. typ.
µA V µA V V V mA mA pF pF
SMP80MC-120
2
108
5
120 155 155
800 150 12 25
SMP80MC-140 126 140 180 180
SMP80MC-160 144 160 205 205
SMP80MC-200 180 200 255 255
SMP80MC-230 207 230 295 295
SMP80MC-270 243 270 345 345
SMP80MC-320 290 320 400 400
SMP80MC Characteristics
Doc ID 9702 Rev 5 5/11
Figure 2. Pulse waveform Figure 3. Non repetitive surge peak on-state
current versus overload duration
100
50
%I
PP
t
t
r
p
0
t
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
I (A)
TSM
0
5
10
15
20
25
30
35
40
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t(s)
F=50Hz
Tj initial = 25°C
Figure 4. On-state voltage versus on-state
current (typical values)
Figure 5. Relative variation of holding
current versus junction
temperature
I (A)
T
10
100
012345678
Tj=25°C
V (V)
T
I [Tj] / I [Tj=25°C]
HH
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Tj(°C)
Figure 6. Relative variation of breakover
voltage versus junction
temperature
Figure 7. Relative variation of leakage
current versus junction
temperature (typical values)
V [Tj] / V [Tj=25°C]
BO BO
0.94
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
1.05
1.06
1.07
1.08
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Tj(°C)
I [Tj] / I [Tj=25°C]
RR
1.E+00
1.E+01
1.E+02
1.E+03
25 50 75 100 125
Tj(°C)
V =243V
R
Characteristics SMP80MC
6/11 Doc ID 9702 Rev 5
Figure 10. Test circuit 1 for dynamic I
BO
and V
BO
parameters
Figure 8. Variation of thermal impedance
junction to ambient versus pulse
duration
Figure 9. Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
Z/R
th(j-a) th(j-a)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tp(s)
Printed circuit board - FR4,
copper thickness = 35µm,
recommended pad layout
C [V ] / C [V =2V]
RR
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1 10 100 1000
V (V)
R
F =1MHz
V = 1V
Tj = 25°C
OSC RMS
100 V / µs, di/dt < 10 A / µs, Ipp = 80A
1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A
U
U
10 µF
2 Ω
45 Ω
66 Ω
470 Ω
83 Ω
0.36 nF
46 µH
60 µF
26 µH
12 Ω
250 Ω
46 µH
47 Ω
KeyTek 'System 2' generator with PN246I module
KeyTek 'System 2' generator with PN246I module
P1-P3P4-P6P7-P9P10-P11

SMP80MC-320

Mfr. #:
Buy SMP80MC-320
Manufacturer:
STMicroelectronics
Description:
THYRISTOR 320V 200A DO214AA
Lifecycle:
New from this manufacturer.
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