SMP80MC Characteristics
Doc ID 9702 Rev 5 7/11
Figure 11. Test circuit 2 for I
BO
and V
BO
parameters
Figure 12. Test circuit 3 for dynamic I
H
parameter
220V 50Hz
1/4
R1 = 140Ω
R2 = 240Ω
K
ton = 20ms
IBO
measurement
VBO
measurement
Vout
DUT
TEST PROCEDURE
Pulse test duration (tp = 20ms):
V selection:
●
●
●
●
for Bidirectional devices = Switch K is closed
for Unidirectional devices = Switch K is open
Device with V < 200V V = 250 V , R1 = 140
OUT
BO OUT RMS
➔ Ω
Device with V 200V V = 480 V , R2 = 240
BO OUT RMS
≥Ω➔
TEST PROCEDURE
1/ Adjust the current level at the I value by short circuiting the AK of the D.U.T.
2/ Fire the D.U.T. with a surge current
H
➔ I=
10A, 10/1000µs.
3/ The D.U.T. will come back off-state within 50ms maximum.
PP
This is a GO-NOGO test which allows to confirm the holding current (I ) level in a
functional test circuit.
H
R
V
BAT
= - 48 V
Surge
generator
D.U.T
