IXGF25N250 Datasheet IXGF25N250 | P1-P3

Features



UL Recognized Package



Electrically Isolated Tab



High Peak Current Capability



Low Saturation Voltage



MOS Gate Turn-On

- Drive Simplicity



Rugged NPT Structure



Molding Epoxies Meet UL 94 V-0

Flammability Classification

Applications



Capacitor Discharge



Pulser Circuits

Advantages



High Power Density



Easy to Mount

V

CES

= 2500V

I

C25

= 30A

V

CE(sat)

≤≤

≤ 2.9V

IXGF25N250

DS99829B(05/09)

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 2500 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 2500 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 30 A

I

C110

T

C

= 110°C 15 A

I

CM

T

C

= 25°C, V

GE

= 20V, 1ms 200 A

SSOA V

GE

= 20V, T

VJ

= 125°C, R

G

= 20Ω I

CM

= 240 A

(RBSOA) Clamped Inductive Load 0.5 • V

CES

P

C

T

C

= 25°C 114 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

F

C

Mounting Force 20..120/4.5..27 Nm/lbin.

V

ISOL

50/60Hz, 1 minute 2500 V~

Weight 5g

High Voltage IGBT

For Capacitor Discharge

Applications

( Electrically Isolated Tab)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250µA, V

GE

= 0V 2500 V

V

GE(th)

I

C

= 250µA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= 0.8 • V

CES

, V

GE

= 0V, Note 2 50 µA

T

J

= 125°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 25A, V

GE

= 15V, Note 1 2.9 V

I

C

= 75A 5.2 V

1 = Gate 5 = Collector

2 = Emitter

ISOPLUS i4-Pak

TM

1

5

2

ISOLATED TAB

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGF25N250

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 50A, V

CE

= 10V, Note 1 16 26 S

I

C(ON)

V

GE

= 15V, V

CE

= 20V, Note 1 240 A

C

ies

2970 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 98 pF

C

res

36 pF

Q

g

75 nC

Q

ge

I

C

= 50A, V

GE

= 15V, V

CE

= 0.5 • V

CES

15 nC

Q

gc

30 nC

t

d(on)

68 ns

t

r

233 ns

t

d(off)

209 ns

t

f

200 ns

R

thJC

1.10 °C/W

R

thCS

0.15 °C/W

R

thJA

30 °C/W

Resistive Switching Times

I

C

= 50A, V

GE

= 15V

V

CE

= 1250V, R

G

= 5Ω

Notes: 1. Pulse Test, t < 300µs; Duty Cycle, d < 2%.

2. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

ISOPLUS i4-Pak

TM

(HV) (IXGF) Outline

IXGF25N250

IXYS REF: G_25N250(5P-P528)4-21-08-E

Fig. 1. Output Characteristics

@ 25ºC

0

15

30

45

60

75

90

105

120

135

150

012345678

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

10V

15V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

25

50

75

100

125

150

175

200

225

250

02468101214161820

V

CE

- Volts

I

C

-

Amperes

V

GE

= 25V

20V

15V

10V

Fig. 3. Output Characteristics

@ 125ºC

0

20

40

60

80

100

120

140

160

180

200

0246810121416

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

10V

15V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 150A

I

C

= 100A

I

C

= 50A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

3

4

5

6

7

8

9

10

7 8 9 10 11 12 13 14 15 16 17

V

GE

- Volts

V

CE

- Volts

I

C

= 150A

V

GE

= 15V

I

C

= 100A

I

C

= 50A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

45678910111213

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGF25N250

IXGF25N250

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