OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXGF25N250

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGF25N250
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
10.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
( t h ) JC
- ºC / W
Fig. 7. Transconductance
0
3
6
9
12
15
18
21
24
27
30
33
36
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 1020304050607080
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1250V
I
C
= 50A
I
G
= 10 mA
Fig. 9. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
240
280
250 500 750 1000 1250 1500 1750 2000 2250 2500
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10
dV / dt < 10V / ns
Fig. 10. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_25N250(5P-P528)4-21-08-E
IXGF25N250
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
200
240
280
320
360
400
440
480
520
560
600
640
680
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5
V
GE
= 15V
V
CE
= 1250V
I
C
= 150A
I
C
= 50A
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
200
250
300
350
400
450
500
550
600
650
700
50 60 70 80 90 100 110 120 130 140 150
I
C
- Amperes
t
r
- Nanoseconds
T
J
= 125ºC
T
J
= 25ºC
R
G
= 5
V
GE
= 15V
V
CE
= 1250V
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
170
180
190
200
210
220
230
240
250
260
50 60 70 80 90 100 110 120 130 140 150
I
C
- Amperes
t
f
- Nanoseconds
90
105
120
135
150
165
180
195
210
225
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
480
500
520
540
560
580
600
620
640
660
680
700
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
80
84
88
92
96
100
104
108
112
116
120
124
t
d
(
o n
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 150A
I
C
= 50A
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
190
195
200
205
210
215
220
225
230
235
240
245
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
110
120
130
140
150
160
170
180
190
200
210
220
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5, V
GE
= 15V
V
CE
= 1250V
I
C
= 50A, 150A
I
C
= 150A, 50A
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
200
205
210
215
220
225
230
235
240
245
250
255
260
4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
100
115
130
145
160
175
190
205
220
235
250
265
280
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 150A, 50A
P1-P3P4-P5

IXGF25N250

Mfr. #:
Buy IXGF25N250
Manufacturer:
Littelfuse
Description:
IGBT Transistors I4-Pak
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet