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STTH1302CFP

P1-P3P4-P6P7-P7
1/7
STTH1302CT/CG/CFP
®
October 2003 - Ed: 2A
HIGH EFFICIENCY ULTRAFAST DIODE
I
F(AV)
2 x 6.5 A
V
RRM
200 V
Tj (max) 175 °C
V
F
(max) 0.95 V
trr (max) 25 ns
MAIN PRODUCT CHARACTERISTICS
■
Suited for SMPS
■
Low losses
■
Low forward and reverse recovery times
■
High surge current capability
■ High junction temperature
■ Insulated package: TO-220FPAB:
Insulation voltage = 2000 V
DC
Capacitance = 12 pF
FEATURES AND BENEFITS
Dual center tap rectifier suited for Switch
Mode Power Supplies andhigh frequency DC to
DC converters.
This device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
TO-220AB
STTH1302CT
A1
A2
K
K
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
RMS forward current 20 A
I
F(AV)
Average forward
current δ = 0.5
TO-220AB / Tc = 155°C Per diode 6.5 A
D
2
PAK Tc = 145°C Per device 13
TO-220FPAB Tc = 135°C Per diode 6.5 A
Tc = 110°C Per device 13
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoïdal 70 A
T
stg
Storage temperature range -65 to+175 °C
Tj Maximum operating junction temperature 175 °C
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
D
2
PAK
STTH1302CG
A1
A2
K
TO-220FPAB
STTH1302CFP
A1
A2
K
STTH1302CT/CG/CFP
2/7
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AB / D
2
PAK Per diode 3 °C/W
TO-220FPAB 5.5
TO-220AB / D
2
PAK Total 1.9 °C/W
TO-220FPAB 4.5
R
th (c)
Coupling TO-220AB / D
2
PAK 0.8 °C/W
TO-220FPAB 3.5
THERMAL RESISTANCES
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
* Reverse leakage Current Tj = 25°C V
R
=V
RRM
6 µA
Tj = 125°C 3 60
V
F
** Forward Voltage drop Tj = 25°C I
F
= 6.5 A 1.1 V
Tj = 125°C I
F
= 6.5 A 0.81 0.95
Tj = 25°C I
F
= 13 A 1.25
Tj = 125°C I
F
= 13 A 0.95 1.1
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.80xI
F(AV)
+ 0.023 x I
F
2
(RMS)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
trr Reverse recovery time Tj = 25°C I
F
= 0.5 A
Irr = 0.25 A
I
R
=1A
16 25 ns
tfr Forward recovery time Tj = 25°C I
F
= 6.5 A
dI
F
/dt = 100 A/µs
V
FR
=1.1xV
F
max
70 ns
V
FP
Forward recovery voltage Tj = 25°C I
F
= 6.5 A
dI
F
/dt = 100 A/µs
2.2 V
DYNAMIC CHARACTERISTICS (per diode)
STTH1302CT/CG/CFP
3/7
P (W)F(AV)
0
1
2
3
4
5
6
7
8
012345678
I (A)F(AV)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0.1
1.0
1.E-02 1.E-01 1.E+00 1.E+01
T
δ
=tp/T
tp
tp(s)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Zth / Rth(j-c) (j-c)
Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
0.1
1.0
10.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V (V)FM
T=125°C
Typical values
j
T=25°C
Maximum values
j
I (A)FM
T=125°C
Maximum values
j
Fig. 3: Forward voltage drop versus forward cur-
rent (per diode).
0
10
20
30
40
50
60
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P=5W
P=2W
P=10W
I (A)M
δ
T
δ
=tp/T
tp
I
M
Fig. 2: Peak current versus factor (per diode).
Zth / Rth(j-c) (j-c)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ
=tp/T
tp
tp(s)
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB /
D
2
PAK).
0
10
20
30
40
50
60
70
80
90
100
1.E-03 1.E-02 1.E-01 1.E+00
t(s)
T =25°CC
T =75°CC
T =125°CC
I (A)M
IM
t
δ=0.5
Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration per diode
(TO-220AB / D
2
PAK).
P1-P3P4-P6P7-P7

STTH1302CFP

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Buy STTH1302CFP
Manufacturer:
STMicroelectronics
Description:
DIODE ARRAY GP 200V 6.5A TO220FP
Lifecycle:
New from this manufacturer.
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