STTH1302CT/CG/CFP
4/7
0
10
20
30
40
50
60
70
1.E-03 1.E-02 1.E-01 1.E+00
t(s)
T =25°CC
T =75°CC
T =125°CC
I (A)M
IM
t
δ=0.5
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration per diode
(TO-220FPAB).
0
10
20
30
40
50
60
70
80
10 100 1000
trr(ns)
Tj=25°C
T=125°Cj
I =6.5A
V =100V
F
R
dI /dt(A/µs)F
Fig. 9: Reverse recovery time versus dI
F
/dt (90%
confidence, per diode).
10
100
1 10 100 1000
V (V)R
F=1MHz
V =30V
Tj=25°C
OSC RMS
C(nF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
1
2
3
4
5
6
7
8
0 25 50 75 100 125 150 175
T (°C)amb
Rth =Rth(j-a) (j-c)
D²PAK (S=1cm²)
Rth =50°C/W
(j-a)
TO-220AB/D²PAK
TO-220FPAB
I (A)F(AV)
Fig. 6: Average forward current versus ambient tem-
perature (δ=0.5, per diode).
0
20
40
60
80
100
120
140
160
180
200
220
240
10 100 1000
dI /dt(A/µs)F
Q (nC)RR
I =6.5A
V =200V
F
R
T=125°Cj
Tj=25°C
Fig. 8: Reverse recovery charges versus dI
F
/dt
(90% confidence, per diode).
0
2
4
6
8
10
12
10 100 1000
I (A)RM
Tj=25°C
T=125°Cj
I =6.5A
V =100V
F
R
dI /dt(A/µs)F
Fig. 10: Reverse recovery current versus dI
F
/dt
(90% confidence, per diode).
