NCP5214A
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PIN FUNCTION DESCRIPTION
Pin Symbol Description
1 VDDQEN VDDQ regulator enable input. High to enable.
2 VTTEN VTT regulator enable input. High to enable.
3 FPWM Forced PWM enable input. Low to enable forced PWM mode and disable power−saving mode.
4 SS VDDQ Soft−start capacitor connection to ground.
5 VTTGND Power ground for the VTT regulator.
6 VTT VTT regulator output.
7 VTTI Power input for VTT regulator which is normally connected to the VDDQ output of the buck regulator.
8 FBVTT VTT regulator feedback pin for closed loop regulation.
9 AGND Analog ground connection and remote ground sense.
10 DDQREF External reference input which is used to regulate VTT and VTTREF to 1/2VDDQREF.
11 VCCA 5.0 V supply input for the IC’s control and logic section, which is monitored by undervoltage lock out
circuitry.
12 COMP VDDQ error amplifier compensation node.
13 FBDDQ VDDQ regulator feedback pin for closed loop regulation.
14 VTTREF DDR reference voltage output.
15 PGOOD Power good signal open−drain output.
16 OCDDQ
Overcurrent sense and program input for the high−side FET of VDDQ regulator. Also the battery voltage
input for the internal ramp generator to implement the voltage feedforward rejection to the input voltage
variation. This pin must be connected to the VIN through a resistor to perform the current limit and volt-
age feedforward functions.
17 BOOST Positive supply input for high−side gate driver of VDDQ regulator and boost capacitor connection.
18 TGDDQ Gate driver output for VDDQ regulator high−side N−Channel power FET.
19 SWDDQ VDDQ regulator inductor driven node, return for high−side gate driver, and current limit sense input.
20 VCCP Power supply for the VDDQ regulator low−side gate driver and also supply voltage for the bootstrap
capacitor of the VDDQ regulator high−side gate driver supply.
21 BGDDQ Gate driver output for VDDQ regulator low−side N−Channel power FET.
22 PGND Power ground for the VDDQ regulator.
23 THPAD Copper pad on bottom of IC used for heatsinking. This pin should be connected to the ground plane un-
der the IC.
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MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage (Pin 11, 20) to AGND (Pin 9) V
CCA
, V
CCP
−0.3, 6.0 V
High−Side Gate Drive Supply: BOOST (Pin 17) to SWDDQ (Pin 19)
High−Side FET Gate Drive Voltage: TGDDQ (Pin 18) to SWDDQ (Pin 19)
V
BOOST
−V
SWDDQ,
V
TGDDQ
−V
SWDDQ
−0.3, 6.0 V
Input/Output Pins to AGND (Pin 9)
Pins 1−4, 6−8, 10, 12−15, 21
V
IO
−0.3, 6.0 V
Overcurrent Sense Input (Pin 16) to AGND (Pin 9) V
OCDDQ
27 V
Switch Node (Pin 19) V
SWDDQ
−4.0 (<100 ns),
−0.3 (dc), 32
V
PGND (Pin 22), VTTGND (Pin 5) to AGND (Pin 9) V
GND
−0.3, 0.3 V
Thermal Characteristics
DFN22 Plastic Package
Thermal Resistance, Junction−to−Ambient
R
q
JA
35 _C/W
Operating Junction Temperature Range T
J
0 to +150 _C
Operating Ambient Temperature Range T
A
−40 to +85 _C
Storage Temperature Range T
stg
−55 to +150 _C
Moisture Sensitivity Level MSL 1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) 2.0 kV per JEDEC standard: JESD22–A114 except Pin 17 which is 1 kV.
Machine Model (MM) 200 V per JEDEC standard: JESD22–A115 except Pin 17 which is 150 V.
2. Latchup Current Maximum Rating: 150 mA per JEDEC standard: JESD78.
3. Pin 16 (OCDDQ) must be pulled high to VIN through a resistor.
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ELECTRICAL CHARACTERISTICS (V
IN
= 12 V, T
A
= −40 to 85_C, V
CCA
= V
CCP
= V
BOOST
− V
SWDDQ
= 5.0 V, L = 1.8 mH,
C
OUT1
= 150 mF x 2, C
OUT2
= 22 mF x 2, RL1 = 5.6 kW, R1 = 4.3 kW, R2 = 3.3 kW, RZ1 = 10 kW, RZ2 = 130 W, CP1 = 100 pF, CZ1 = 2.2 nF,
CZ2 = 4.7 nF, for min/max values unless otherwise noted. Typical values are at T
A
= 25_C.)
Characteristic Symbol Test Conditions Min Typ Max Unit
SUPPLY VOLTAGE
Input Voltage V
IN
4.5 24 V
V
CCA
Operating Voltage V
CCA
4.5 5.0 5.5 V
V
CCP
Operating Voltage V
CCP
4.5 5.0 5.5 V
SUPPLY CURRENT
V
CCA
Quiescent Supply Current in S0 I
VCCA_S0
V
DDQEN
= 5.0 V, V
TTEN
= 5.0 V 3.5 10 mA
V
CCA
Quiescent Supply Current in S3 I
VCCA_S3
V
DDQEN
= 5.0 V, V
TTEN
= 0 V 0.9 5.0 mA
V
CCA
Shutdown Current I
VCCA_SD
V
DDQEN
= 0 V, V
TTEN
= 0 V,
T
A
= 25°C
1.0 4.0 mA
V
CCP
Quiescent Supply Current in S0 I
VCCP_S0
V
DDQEN
= 5.0 V, V
TTEN
= 5.0 V,
TGDDQ and BGDDQ Open
20 mA
V
CCP
Quiescent Supply Current in S3 I
VCCP_S3
V
DDQEN
= 5.0 V, V
TTEN
= 0 V,
TGDDQ and BGDDQ Open
20 mA
V
CCP
Shutdown Current I
VCCP_SD
V
DDQEN
= 0 V, V
TTEN
= 0 V 1.0 2.0 mA
UNDERVOLTAGE MONITOR
V
CCA
UVLO Lower Threshold V
CCAUV−
Falling Edge 3.7 4.1 V
V
CCA
UVLO Hysteresis V
CCAUVHYS
0.35 V
V
OCDDQ
UVLO Upper Threshold V
OCDDQUV+
Rising Edge 3.0 4.4 V
V
OCDDQ
UVLO Hysteresis V
OCDDQUVHYS
0.4 V
THERMAL SHUTDOWN
Thermal Trip Point T
SD
(Note 4) 150 _C
Hysteresis T
SDHYS
(Note 4) 25 _C
V
DDQ
SWITCHING REGULATOR
FBDDQ Feedback Voltage, Control Loop in
Regulation
V
FBDDQ
T
A
= 25°C
T
A
= −40 to 85°C
0.788
0.784
0.8
0.8
0.812
0.816
V
Feedback Input Current I
fb
V
FBDDQ
= 0.8 V 1.0 mA
Oscillator Frequency F
SW
340 400 460 kHz
Ramp Amplitude Voltage V
ramp
V
IN
= 5.0 V (Note 4) 1.25 V
Ramp Amplitude to V
IN
Ratio dVRAMP/dVIN 45 mV/V
OCDDQ Pin Current Sink I
OC
V
OCDDQ
= 4.0 V 26 31 36 mA
OCDDQ Pin Current Sink
Temperature Coefficient
TC
IOC
T
A
= −40 to 85°C 3200 ppm/
_C
Minimum On Time t
onmin
150 ns
Maximum Duty Cycle D
max
V
IN
= 5.0 V
V
IN
= 15 V
V
IN
= 24 V
90
50
32
%
Soft−Start Current I
ss
V
DDQEN
= 5.0 V, Vss = 0 V 2.8 4.0 5.2 mA
Overvoltage Trip Threshold FBOVPth With Respect to Error
Comparator Threshold of 0.8 V
115 130 %
Undervoltage Trip Threshold FBUVPth With Respect to Error
Comparator Threshold of 0.8 V
65 75 %
4. Guaranteed by design, not tested in production.

NCP5214AMNR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers OSPI 2 IN 1 NTEBOOK
Lifecycle:
New from this manufacturer.
Delivery:
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