6.42
4
IDT71124 CMOS Static RAM
1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)
71124S12
(2)
71124S15 71124S20
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
t
RC
Read Cycle Time 12
____
15
____
20
____
ns
t
AA
Address Access Time
____
12
____
15
____
20 ns
t
ACS
Chip Select Access Time
____
12
____
15
____
20 ns
t
CLZ
(1)
Chip Select to Output in Low-Z 3
____
3
____
3
____
ns
t
CHZ
(1)
Chip Deselect to Output in High-Z 060708ns
t
OE
Output Enable to Output Valid
____
6
____
7
____
8ns
t
OLZ
(1)
Output Enable to Output in Low-Z 0
____
0
____
0
____
ns
t
OHZ
(1)
Output Disable to Output in High-Z 050507ns
t
OH
Output Hold from Address Change 4
____
4
____
4
____
ns
t
PU
(1)
Chip Select to Power-Up Time 0
____
0
____
0
____
ns
t
PD
(1)
Chip Deselect to Power-Down Time
____
12
____
15
____
20 ns
WRITE CYCLE
t
WC
Write Cycle Time 12
____
15
____
20
____
ns
t
AW
Address Valid to End of Write 8
____
12
____
15
____
ns
t
CW
Chip Select to End of Write 8
____
12
____
15
____
ns
t
AS
Address Set-up Time 0
____
0
____
0
____
ns
t
WP
Write Pulse Width 8
____
12
____
15
____
ns
t
WR
Write Recovery Time 0
____
0
____
0
____
ns
t
DW
Data Valid to End-of-Write 6
____
8
____
9
____
ns
t
DH
Data Hold Time 0
____
0
____
0
____
ns
t
OW
(1)
Output active from End-of-Write 3
____
3
____
4
____
ns
t
WHZ
(1)
Write Enable to Output in High-Z 050508ns
3514 tbl 09
NOTE:
1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
2. There is no industrial temperature offering for the 12ns speed grade.
