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SSM6N7002CFU,LF

P1-P3P4-P6P7-P8
SSM6N7002CFU
1
MOSFETs Silicon N-Channel MOS
SSM6N7002CFU
SSM6N7002CFU
SSM6N7002CFU
SSM6N7002CFU
Start of commercial production
2015-04
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Speed Switching
2.
2.
2.
2. Features
Features
Features
Features
(1) Gate-Source diode for protection
(2) Low drain-source on-resistance
: R
DS(ON)
= 2.8 Ω (typ.) (@V
GS
= 10 V, I
D
= 100 mA)
R
DS(ON)
= 3.1 Ω (typ.) (@V
GS
= 5 V, I
D
= 100 mA)
R
DS(ON)
= 3.2 Ω (typ.) (@V
GS
= 4.5 V, I
D
= 100 mA)
3.
3.
3.
3. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
US6
1. Source1
2. Gate1
3. Drain2
4. Source2
5. Gate2
6. Drain1
2015-04-13
Rev.1.0
SSM6N7002CFU
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Channel temperature
Storage temperature
(Note 1)
(Note 1), (Note 2)
(Note 3)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
60
±20
170
680
285
150
-55 to 150
Unit
V
mA
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) ≤ 10 µs, duty ≤ 1%
Note 3: Device mounted on an FR-4 board.(total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm ,Cu pad: 645 mm
2
)
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, R
th(ch-a)
, and the drain power dissipation, P
D
, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2015-04-13
Rev.1.0
SSM6N7002CFU
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)(Q1,Q2 Common)
)(Q1,Q2 Common)
)(Q1,Q2 Common)
)(Q1,Q2 Common)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 2)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
|Y
fs
|
Test Condition
V
DS
= 0 V, V
GS
= ±16 V
V
DS
= 0 V, V
GS
= ±10 V
V
DS
= 0 V, V
GS
= ±5 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V,
T
j
= 150
I
D
= 250 µA, V
GS
= 0 V
I
D
= 250 µA, V
DS
= V
GS
I
D
= 100 mA, V
GS
= 10 V
I
D
= 100 mA, V
GS
= 10 V,
T
j
= 150
I
D
= 100 mA, V
GS
= 5 V
I
D
= 100 mA, V
GS
= 4.5 V
V
DS
= 10 V, I
D
= 200 mA
Min
60
1.1
Typ.
2.8
5.4
3.1
3.2
450
Max
±2
±0.5
±0.1
1
200
2.1
3.9
8.1
4.4
4.7
Unit
µA
µA
V
V
Ω
mS
Note 1: Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (250 µA for
this device). Then, for normal switching operation, V
GS(ON)
must be higher than V
th
, and V
GS(OFF)
must be
lower than V
th
. This relationship can be expressed as: V
GS(OFF)
< V
th
< V
GS(ON)
.
Take this into consideration when using the device.
Note 2: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)(Q1,Q2 Common)
)(Q1,Q2 Common)
)(Q1,Q2 Common)
)(Q1,Q2 Common)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on delay time)
Switching time (rise time)
Switching time (turn-off delay time)
Switching time (fall time)
Symbol
C
iss
C
rss
C
oss
t
d(on)
t
r
t
d(off)
t
f
Test Condition
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 40 V, I
D
= 160 mA,
V
GS
= 0 to 10 V, R
G
= 50 Ω
Min
Typ.
11
0.7
3
2
3
7
24
Max
17
4
14
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
2015-04-13
Rev.1.0
P1-P3P4-P6P7-P8

SSM6N7002CFU,LF

Mfr. #:
Buy SSM6N7002CFU,LF
Manufacturer:
Toshiba
Description:
MOSFET Small-Signal MOSFET 2-in-1
Lifecycle:
New from this manufacturer.
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