SSM6N7002CFU
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Q
g
Q
gs
Q
gd
Test Condition
V
DS
= 30 V, I
D
= 200 mA,
V
GS
= 4.5 V
Min
Typ.
0.27
0.08
0.08
Max
0.35
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
Characteristics
Diode forward voltage (Note 1)
Symbol
V
DSF
Test Condition
I
D
= -115 mA, V
GS
= 0 V
Min
Typ.
-0.87
Max
-1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
2015-04-13
Rev.1.0