Philips Semiconductors Product specification
TrenchMOS transistor BUK9880-55
Logic level FET
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 ˚C
.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 5 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0246810
0
10
20
30
40
ID/A
VDS/V
VGS/V =
10
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
7
6
0 5 10 15 20
5
6
7
8
9
10
11
12
13
14
15
gfs/S
ID/A
5 10152025
70
75
80
85
90
95
100
105
110
115
RDS(ON)/mOhm
4
4.2
4.4
4.6
4.8
5
ID/A
BUK98XX-55
-100 -50 0 50 100 150 200
0.5
1
1.5
2
2.5
Tmb / degC
Rds(on) normalised to 25degC
a
012345
0
5
10
15
20
ID/A
VGS/V
Tj/C = 150
25
BUK98xx-55
-100 -50 0 50 100 150 200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
April 1998 4 Rev 1.100
