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PZU4.7DB2,115

P1-P3P4-P6P7-P9P10-P12P13-P13
PZUXDB2_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 31 March 2008 3 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[2] /DG: halogen-free plastic package
5. Limiting values
[1] t
p
= 100 µs; square wave; T
j
=25°C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
PZU10DB2 TF* PZU10DB2/DG UF*
PZU11DB2 TG* PZU11DB2/DG UG*
PZU12DB2 TH* PZU12DB2/DG UH*
PZU13DB2 TK* PZU13DB2/DG UK*
PZU14DB2 TL* PZU14DB2/DG UL*
PZU15DB2 TM* PZU15DB2/DG UM*
PZU16DB2 TN* PZU16DB2/DG UN*
PZU18DB2 TP* PZU18DB2/DG UP*
PZU20DB2 TR* PZU20DB2/DG UR*
PZU22DB2 TS* PZU22DB2/DG US*
PZU24DB2 TT* PZU24DB2/DG UT*
Table 4. Marking codes
…continued
Type number Marking code
[1]
Type number
[2]
Marking code
[1]
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
I
F
forward current - 200 mA
I
ZSM
non-repetitive peak reverse
current
[1]
- see
Table 8
P
ZSM
non-repetitive peak reverse
power dissipation
[1]
-40W
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[2]
- 250 mW
[3]
- 275 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
PZUXDB2_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 31 March 2008 4 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Soldering points at pin 4 and pin 5.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
[2]
- - 455 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[3]
- - 200 K/W
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
I
F
= 10 mA - - 0.9 V
I
F
= 100 mA - - 1.1 V
Table 8. Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG
T
j
=25
°
C unless otherwise specified.
PZUxDB2
PZUxDB2/DG
Working
voltage
V
Z
(V)
Differential resistance
r
dif
(Ω)
Reverse
current
I
R
(µA)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
= 0.5 mA I
Z
=5mA I
Z
=5mA
Min Max Max Max Max V
R
(V) Typ Max Max
2.7 2.65 2.9 1000 100 20 1 −2.0 440 8
3.0 2.95 3.2 1000 95 10 1 −2.1 425 8
3.3 3.25 3.5 1000 95 5 1 −2.4 410 8
3.6 3.55 3.8 1000 90 5 1 −2.4 390 8
3.9 3.87 4.1 1000 90 3 1 −2.5 370 8
4.3 4.15 4.34 1000 90 3 1 −2.5 350 8
4.7 4.55 4.75 800 80 2 1 −1.4 325 8
5.1 4.98 5.2 250 60 2 1.5 0.3 300 5.5
5.6 5.49 5.73 100 40 1 2.5 1.9 275 5.5
6.2 6.06 6.33 80 30 0.5 3 2.7 250 5.5
6.8 6.65 6.93 60 20 0.5 3.5 3.4 215 5.5
7.5 7.28 7.6 60 10 0.5 4 4.0 170 3.5
PZUXDB2_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 31 March 2008 5 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 µs; square wave; T
j
=25°C prior to surge
8.2 8.02 8.36 60 10 0.5 5 4.6 150 3.5
9.1 8.85 9.23 60 10 0.5 6 5.5 120 3.5
10 9.77 10.21 60 10 0.1 7 6.4 110 3.5
11 10.76 11.22 60 10 0.1 8 7.4 108 3
12 11.74 12.24 80 10 0.1 9 8.4 105 3
13 12.91 13.49 80 10 0.1 10 9.4 103 2.5
14 13.7 14.3 80 10 0.1 11 10.4 101 2
15 14.34 14.98 80 15 0.05 11 11.4 99 2
16 15.85 16.51 80 20 0.05 12 12.4 97 1.5
18 17.56 18.35 80 20 0.05 13 14.4 93 1.5
20 19.52 20.39 100 20 0.05 15 16.4 88 1.5
22 21.54 22.47 100 25 0.05 17 18.4 84 1.3
24 23.72 24.78 120 30 0.05 19 20.4 80 1.3
Table 8. Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG
…continued
T
j
=25
°
C unless otherwise specified.
PZUxDB2
PZUxDB2/DG
Working
voltage
V
Z
(V)
Differential resistance
r
dif
(Ω)
Reverse
current
I
R
(µA)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
= 0.5 mA I
Z
=5mA I
Z
=5mA
Min Max Max Max Max V
R
(V) Typ Max Max
P1-P3P4-P6P7-P9P10-P12P13-P13

PZU4.7DB2,115

Mfr. #:
Buy PZU4.7DB2,115
Manufacturer:
Nexperia
Description:
Zener Diodes 40W 200mA 4.75V Dual Zener diodes
Lifecycle:
New from this manufacturer.
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