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PZU4.7DB2,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PZUXDB2_SER_1
© NXP B.V
. 2008. All rights reserved.
Product data sheet
Rev
. 01 — 31 Marc
h 2008
6 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
T
j
=2
5
°
C (prior to surge)
T
j
=2
5
°
C
Fig 1.
Non-repetitive peak rever
se power dissipation
as a function of pulse duration; maximum
values
Fig 2.
Forward current as a function of f
orwar
d
v
oltage; typical values
T
j
=2
5
°
C to 150
°
C
PZU2.7DB2 to PZU4.3DB2
PZU2.7DB2/DG to PZU4.3DB2/DG
T
j
=2
5
°
C to 150
°
C
PZU4.7DB2 to PZU12DB2
PZU4.7DB2/DG to PZU12DB2/DG
Fig 3.
T
emperature coefficient as a function of
working current; typical v
alues
Fig 4.
T
emperature coefficient as a function of
working current; typical v
alues
006aab215
10
2
10
10
3
P
ZSM
(W)
1
t
p
(s)
10
−
4
10
−
2
10
−
3
V
F
(V)
0.6
1
0.8
mbg781
100
200
300
I
F
(mA)
0
06
0
0
−
2
−
3
−
1
20
40
I
Z
(mA)
S
Z
(mV/K)
4.3
3.9
3.6
3.3
3.0
2.7
006aab216
02
0
16
10
0
−
5
5
mgl274
48
1
2
I
Z
(mA)
S
Z
(mV/K)
4.7
12
11
10
9.1
8.2
7.5
6.8
6.2
5.6
5.1
PZUXDB2_SER_1
© NXP B.V
. 2008. All rights reserved.
Product data sheet
Rev
. 01 — 31 Marc
h 2008
7 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
8.
T
est information
8.1
Quality information
This product has been qualified in accordance with the A
utomotiv
e Electronics Council
(AEC) standard
Q101 - Stress test qualification f
or discrete semiconductors
, and is
suitable f
or use in automotive applications.
T
j
=2
5
°
C
PZU2.7DB2 to PZU6.2DB2
PZU2.7DB2/DG to PZU6.2DB2/DG
T
j
=2
5
°
C
PZU6.8DB2 to PZU24DB2
PZU6.8DB2/DG to PZU24DB2/DG
Fig 5.
W
orking current as a function of working
v
oltage; typical values
Fig 6.
W
orking current as a function of working
v
oltage; typical values
006aab217
10
−
1
10
−
2
10
1
10
2
I
Z
(mA)
10
−
3
V
Z
(V)
07
56
4
3
12
V
Z(nom)
(V) = 2.7
5.1
5.6
6.2
3.0
3.3
3.6
3.9
4.3
4.7
006aab218
10
−
1
10
−
2
10
1
10
2
I
Z
(mA)
10
−
3
V
Z
(V)
02
5
20
10
15
5
7.5
16
18
20
22
24
8.2
9.1
10
11
12
13
14
15
V
Z(nom)
(V) = 6.8
PZUXDB2_SER_1
© NXP B.V
. 2008. All rights reserved.
Product data sheet
Rev
. 01 — 31 Marc
h 2008
8 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
9.
P
ac
ka
ge outline
10.
P
ac
king inf
ormation
[1]
For further information and the av
ailability of packing methods
, see
Section 13
.
Fig 7.
P
acka
ge outline SO
T353 (SC-88A)
04-11-16
Dimensions in mm
0.25
0.10
0.3
0.2
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
13
2
4
5
T
able 9.
P
acking methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
T
ype number
Pa
ck
a
g
e
Description
P
acking quantity
3
000
10
000
PZU2.7DB2 to
PZU24DB2
SO
T353
4 mm pitch, 8 mm tape and reel
-115
-135
PZU2.7DB2/DG to
PZU24DB2/DG
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PZU4.7DB2,115
Mfr. #:
Buy PZU4.7DB2,115
Manufacturer:
Nexperia
Description:
Zener Diodes 40W 200mA 4.75V Dual Zener diodes
Lifecycle:
New from this manufacturer.
Delivery:
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