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NSP8818MUTAG

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2017
May, 2018 − Rev. 3
1 Publication Order Number:
NSP8814/D
NSP8814, NSP8818
ESD and Surge Protection
Device
Low Capacitance Surge Protection for
High Speed Data
The NSP8814 and NSP8818 surge protectors are designed
specifically to protect 10/100 and GbE Ethernet signals from high
levels of surge current. Low clamping voltage under high surge
conditions make this device an ideal solution for protecting voltage
sensitive lines leading to Ethernet transceiver chips. Low capacitance
combined with flow-through style packaging allows for easy PCB
layout and matched trace lengths necessary to maintain consistent
impedance between high-speed differential lines.
Features
• Protection for the Following IEC Standards:
IEC 61000−4−2 (ESD) ±30 kV (Contact)
IEC 61000−4−5 (Lightning) 35 A (8/20 ms)
• Flow−Thru Routing Scheme
• Low Capacitance: 2 pF Max (I/O to I/O)
• UL Flammability Rating of 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• 10/100 and GbE Ethernet
• MagJacks® / Integrated Magnetics
• Notebooks/Desktops/Servers
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Operating Junction Temperature Range T
J
−55 to +125 °C
Storage Temperature Range T
stg
−55 to +150 °C
Lead Solder Temperature −
Maximum (10 Seconds)
T
L
260 °C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ISO 10605 330 pF / 330 W Contact
ISO 10605 330 pF / 2 kW Contact
ISO 10605 150 pF / 2 kW Contact
ESD ±30
±30
±30
±30
±30
kV
Maximum Peak Pulse Current
8/20 ms @ T
A
= 25°C
10/700 ms @ T
A
= 25°C
I
PP
35
20
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of survivability specs.
MARKING
DIAGRAMS
Device Package Shipping
ORDERING INFORMATION
UDFN8
CASE 506CV
www.onsemi.com
NSP8814MUTAG
UDFN8
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
UDFN10
CASE 506CU
SZNSP8814MUTAG
4C M
G
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
4D M
G
NSP8818MUTAG
SZNSP8818MUTAG
UDFN10
(Pb−Free)
3000 / Tape &
Reel
NSP8814, NSP8818
www.onsemi.com
2
Figure 1. Pin Schematic
I/O
I/O
I/O
I/O
GND
GND
NSP8818
I/O
I/O
I/O
I/O
Pin1Pin2 Pin4 Pin5 Pin6 Pin9
Pins 3, 8
Note: Common GND – Only minimum of 1 GND connection required
Pin7
Pin10
I/O
I/O
I/O
I/O
GND
GND
GND
GND
NSP8814
Pin2Pin3Pin6 Pin7
Pins 1, 4, 5, 8
Note: Common GND – Only minimum of 1 GND connection required
GND
GND
GND
GND
GND
=
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
V
RWM
Working Peak Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
HOLD
Holding Reverse Voltage
I
HOLD
Holding Reverse Current
R
DYN
Dynamic Resistance
I
PP
Maximum Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
C
= V
HOLD
+ (I
PP
* R
DYN
)
Uni−Directional Surge Protection
I
PP
I
PP
V
I
I
R
I
T
V
RWM
V
CL
V
BR
V
CL
R
DYN
R
DYN
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
Any I/O to GND (Note 1) 3.0 V
Forward Voltage V
F
I
F
= 10 mA, GND to All IO Pins 0.5 0.85 1.1 V
Breakdown Voltage V
BR
I
T
= 1 mA, I/O to GND 3.2 3.5 5.0 V
Reverse Leakage Current I
R
V
RWM
= 3.0 V, I/O to GND 0.5
mA
Clamping Voltage (Note 2
)
V
C
I
PP
= 1 A 5.0
V
I
PP
= 10 A 6.0
I
PP
= 25 A 10
I
PP
= 35 A 15
Clamping Voltage V
C
IEC61000−4−2, ±8 kV Contact See Figures 7 and 14
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz between I/O Pins 1.5 2.0
pF
V
R
= 0 V, f = 1 MHz between I/O Pins and GND 5.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Surge protection devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater
than the DC or continuous peak operating voltage level.
2. Any I/O to GND (8/20 ms pulse).
NSP8814, NSP8818
www.onsemi.com
3
Figure 2. IEC61000−4−5 8/20 ms Pulse
Waveform
TIME (ms)
50
0
Ipp - PEAK PULSE CURRENT - %Ipp
100
t
r
= rise time to peak value [8 ms]
t
f
= decay time to half value [20 ms]
t
r
t
f
Peak
Value
Half Value
0
Figure 3. Clamping Voltage vs. Peak Pulse Current
(t
p
= 8/20 ms per Figure 2)
20
18
16
14
12
10
8
6
4
2
0
03530255101520
I
pk
(A)
V
pk
(V)
IO−IO
IO−GND
Figure 4. IEC61000−4−5 10/700 ms Pulse
Waveform
TIME (ms)
50
0
Ipp - PEAK PULSE CURRENT - %Ipp
100
t
r
= rise time to peak value [10 ms]
t
f
= decay time to half value [700 ms]
t
r
t
f
Peak
Value
Half Value
0
Figure 5. Clamping Voltage vs. Peak Pulse Current
(t
p
= 10/700 ms per Figure 4)
20
18
16
14
12
10
8
6
4
2
0
0
I
pk
(A)
V
pk
(V)
IO−IO
2 4 6 8 10 12 14 16 18 20
IO−GND
Figure 6. IEC61000−2−4 +8 kV Contact
Clamping Voltage
90
−20 140120100800204060
TIME (ns)
VOLTAGE (V)
80
70
60
50
40
30
20
10
0
−10
Figure 7. IEC61000−2−4 −8 kV Contact
Clamping Voltage
10
−20 140120100800204060
TIME (ns)
VOLTAGE (V)
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
P1-P3P4-P6P7-P9

NSP8818MUTAG

Mfr. #:
Buy NSP8818MUTAG
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 8 CHANNEL TVS ARRAY
Lifecycle:
New from this manufacturer.
Delivery:
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