71256SA20YG8 Datasheet 71256SA15YG8, 71256SA20YGI8, 71256SA12YG8 | P1-P3

NOVEMBER 2014

DSC-2948/11

1

Features

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◆

32K x 8 advanced high-speed CMOS static RAM

◆◆

◆

Commercial (0° to 70°C) and Industrial (-40° to 85°C)

temperature options

◆◆

◆

Equal access and cycle times

– Commercial: 12ns

– Commercial and Industrial: 15/20/25ns

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One Chip Select plus one Output Enable pin

◆◆

◆

Bidirectional data inputs and outputs directly

TTL-compatible

◆◆

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Low power consumption via chip deselect

◆◆

◆

Commercial product available in 28-pin 300-mil Plastic DIP,

300 mil Plastic SOJ and TSOP packages

◆◆

◆

Industrial product available in 28-pin 300 mil Plastic SOJ

and TSOP packages

Description

The IDT71256SA is a 262,144-bit high-speed Static RAM

organized as 32K x 8. It is fabricated using high-performance, high-

reliability CMOS technology. This state-of-the-art technology, com-

bined with innovative circuit design techniques, provides a cost-

effective solution for high-speed memory needs.

The IDT71256SA has an output enable pin which operates as fast

as 6ns, with address access times as fast as 12ns. All bidirectional

inputs and outputs of the IDT71256SA are TTL-compatible and

operation is from a single 5V supply. Fully static asynchronous

circuitry is used, requiring no clocks or refresh for operation.

The IDT71256SA is packaged in 28-pin 300-mil Plastic DIP, 28-

pin 300 mil Plastic SOJ and TSOP.

Functional Block Diagram

CMOS Static RAM

256K (32K x 8-Bit)

IDT71256SA

A

0

A

1

A

2

A

3

A

4

A

5

A

6

A

7

A

8

A

9

A

10

A

11

A

12

A

13

A

14

I/O

0-

I/O

7

CS

WE

OE

8 8

CONTROL

LOGIC

I/O CONTROL

262,144-BIT

MEMORY

ARRAY

ADDRESS

DECODER

2948 drw 01

,

2

IDT71256SA

CMOS Static RAM 256K (32K x 8-Bit) Commercial and Industrial Temperature Ranges

Absolute Maximum Ratings

(1)

Pin Configurations

DIP/SOJ

Top View

Recommended Operating

Temperature and Supply Voltage

Recommended DC Operating

Conditions

Truth Table

(1,2)

TSOP

Top View

NOTE:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those

indicated in the operational sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods may affect

reliability.

Symbol Rating Value Unit

V

CC

Supply Voltage

Relative to GND

-0.5 to +7.0 V

V

TE RM

Terminal Voltage

Relative to GND

-0.5 to V

CC

+0.5 V

T

BIAS

Temperature Under Bias -55 to +125

o

C

T

STG

Storage Temperature -55 to +125

o

C

P

T

Power Dissipation 1.0 W

I

OUT

DC Output Current 50 mA

2948 tbl 02

NOTES:

1. H = VIH, L = VIL, x = Don't care.

2. VLC = 0.2V, VHC = VCC –0.2V.

3. Other inputs ≥VHC or ≤VLC.

CS OE WE

I/O

Function

LLHDATA

OUT

Read Data

LXLDATA

IN

Write Data

L H H High-Z Outputs Disabled

H X X High-Z Deselected - Standby (I

SB

)

V

HC

(3 )

X X High-Z Deselected - Standby (I

SB1

)

2948 tbl 03

Grade Temperature GND Vcc

Commercial 0

O

C to +70

O

C 0V 4.5V ± 5.5V

Industrial -40

O

C to +85

O

C 0V 4.5V ± 5.5V

2948 tbl 01

NOTE:

1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle.

Symbol Parameter Min. Typ. Max. Unit

V

CC

Supply Voltage 4.5 5.0 5.5 V

GND Ground 0 0 0 V

V

IH

Input High Voltage 2.2

____

V

CC

+0.5 V

V

IL

Input Low Voltage -0.5

(1)

____

0.8 V

2948 tbl 04

WE

CS

2948 drw 02

5

6

7

8

9

10

11

12

GND

1

2

3

4

24

23

22

21

20

19

18

17

SO28

P28

13

14

28

27

26

25

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

I/O

0

I/O

1

I/O

2

V

CC

A

14

A

13

A

8

A

10

A

11

OE

A

12

I/O

7

I/O

6

I/O

5

I/O

4

I/O

3

A

9

16

15

2948 drw 02a

22

23

24

25

26

27

28

1

2

3

4

5

7

6

21

20

19

18

17

16

15

14

13

12

11

10

9

8

A

10

CS

I/O

7

I/O

6

I/O

5

I/O

4

I/O

3

GND

I/O

2

I/O

1

I/O

0

A

0

A

1

A

2

SO28

OE

A

11

A

9

A

8

A

13

A

14

A

7

A

6

A

5

A

4

A

3

A

12

WE

V

CC

,

6.42

IDT71256SA

CMOS Static RAM 256K (32K x 8-Bit) Commercial and Industrial Temperature Ranges

3

Figure 2. AC Test Load

(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)

Figure 1. AC Test Load

*Including jig and scope capacitance.

DC Electrical Characteristics

(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC–0.2V)

AC Test Conditions

Capacitance

(TA = +25°C, f = 1.0MHz, SOJ package)

DC Electrical Characteristics

(VCC = 5.0V ± 10%)

2948 drw 03

480Ω

255Ω30pF*

DATA

OUT

5V

,

2948 drw 04

480Ω

255Ω5pF*

DATA

OUT

5V

.

Symbol Parameter Test Conditions

IDT71256SA

UnitMin. Max.

|I

LI

| Input Leakage Current V

CC

= Max., V

IN

=

GND to V

CC

___

5µA

|I

LO

| Output Leakage Current V

CC

= Max., CS = V

IH

, V

OUT

= GND to V

CC

___

5µA

V

OL

Output Low Voltage I

OL

= 8mA, V

CC

= Min.

___

0.4 V

V

OH

Output High Voltage I

OH

= -4mA, V

CC

= Min. 2.4

___

V

2948 tbl 05

NOTES:

1. All values are maximum guaranteed values.

2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.

Symbol Parameter 71256SA12 71256SA15 71256SA20 71256SA25 Unit

I

CC

Dynamic Operating Current

CS <

VIL, Outputs Open, VCC = Max., f = fMAX

(2)

160 150 145 145 mA

I

SB

Standby Power Supply Current (TTL Level)

CS >

VIH, Outputs Open, VCC = Max., f = fMAX

(2)

50 40 40 40 mA

I

SB1

Standby Power Supply Current (CMOS Level)

CS >

VHC, Outputs Open, VCC = Max., f = 0

(2)

,

V

IN < VLC or VIN > VHC

15 15 15 15 mA

2948 tbl 06

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

AC Test Load

GND to 3.0V

3ns

1.5V

See Figures 1 and 2

2948 tbl 07

NOTE:

1. This parameter is guaranteed by device characterization, but not production

tested.

Symbol Parameter

(1)

Conditions Max. Unit

C

IN

Input Capacitance V

IN

= 3dV 7 pF

C

I/O

I/O Capacitance V

OUT

= 3dV 7 pF

2948 tbl 08

71256SA20YG8

71256SA20YG8

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