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DMC3032LSD-13

P1-P3P4-P6P7-P9
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
1 of 9
www.diodes.com
July 2014
© Diodes Incorporated
DMC3032LSD
NEW PRODUCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(on)
max
I
D
Max
T
A
= +25C
(Notes 5 & 7)
Q1 30V
32m @ V
GS
= 10V
8.1A
46m @ V
GS
= 4.5V
6.1A
Q2 -30V
39m @ V
GS
= -10V
-7A
53m @ V
GS
= -4.5V
-5.6A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Power Management Functions
Analog Switch
Load Switch
Features
Low On-Resistance
N-Channel: 32m @ 10V
46m @ 4.5V
P-Channel: 39m @ 10V
53m @ 4.5V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information (See Page 2)
Ordering Information
Weight: 0.072 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMC3032LSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
SO-8
Top View
Top View
D
1
S
1
G
1
D
2
S
2
G
2
N-Channel MOSFET P-Channel MOSFET
S2
D1
S1
D2
G1
G2
D2
D1
e3
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
2 of 9
www.diodes.com
July 2014
© Diodes Incorporated
DMC3032LSD
NEW PRODUCT
Marking Information
Maximum Ratings N-CHANNEL – Q1 @T
A
= +25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
8.1
5.1
A
Pulsed Drain Current (Note 6)
I
DM
25 A
Maximum Ratings P-CHANNEL – Q2 @T
A
= +25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
-7.0
-4.5
A
Pulsed Drain Current (Note 6)
I
DM
-25 A
Thermal Characteristics @T
A
= +25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
2.5 W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
50 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
1
4
8
5
C3032LD
Y
Y W
W
1
4
8
5
C3032LD
Y
Y W
W
Chengdu A/T Site
Shanghai A/T Site
= Manufacturer’s Marking
C3032LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
3 of 9
www.diodes.com
July 2014
© Diodes Incorporated
DMC3032LSD
NEW PRODUCT
Electrical Characteristics N-CHANNEL – Q1 @T
A
= +25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
1 1.45 2.1 V
V
DS
= V
GS
, I
C
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
-
23 32
m
V
GS
= 10V, I
C
= 7A
32 46
V
GS
= 4.5V, I
C
= 5.6A
Forward Transfer Admittance
|Y
fs
|
- 7.6 - S
V
DS
= 5V, I
C
= 7A
Diode Forward Voltage (Note 7)
V
SD
- 0.7 1 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 404.5 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
- 51.8 -
pF
Reverse Transfer Capacitance
C
rss
- 45.1 -
pF
Gate Resistance
R
g
- 1.5 -
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (10V)
Q
g
- 9.2 -
nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 5.8A
Gate-Source Charge
Q
g
s
- 1.2 -
nC
Gate-Drain Charge
Q
g
d
- 1.8 -
nC
Turn-On Delay Time
t
D
on
-
3.4
- ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3, R
L
= 2.6
Turn-On Rise Time
t
r
-
6.18
- ns
Turn-Off Delay Time
t
D
(
off
)
-
13.92
- ns
Turn-Off Fall Time
t
f
-
2.84
- ns
0
4
8
12
16
20
012 345
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
4
8
12
16
20
01 2 34
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
P1-P3P4-P6P7-P9

DMC3032LSD-13

Mfr. #:
Buy DMC3032LSD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET
Lifecycle:
New from this manufacturer.
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