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DMC3032LSD-13

P1-P3P4-P6P7-P9
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
4 of 9
www.diodes.com
July 2014
© Diodes Incorporated
DMC3032LSD
NEW PRODUCT
0.1 1 10 100
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
0.01
0.1
1
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
V = 8.0V
GS
0
0.02
0.04
0.06
0.08
04 8121620
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 10V
I = 10A
GS
D
V = 4.5V
I = 5.0A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0
0.01
0.02
0.03
0.0
7
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0.04
0.06
0.05
V = 10V
I = 10A
GS
D
V = 4.5V
I = 5.0A
GS
D
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.4
0.8
1.2
1.6
2.0
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
5 of 9
www.diodes.com
July 2014
© Diodes Incorporated
DMC3032LSD
NEW PRODUCT
0 5 10 15 20 25 30
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0 5 10 15 20 25 30
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I, D
R
AIN-S
O
U
R
C
E LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
6 of 9
www.diodes.com
July 2014
© Diodes Incorporated
DMC3032LSD
NEW PRODUCT
Electrical Characteristics P-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1 µA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-1 -1.7 -2.2 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
-
30 39
m
V
GS
= -10V, I
D
= -4.3A
42 53
V
GS
= -4.5V, I
D
= -3.7A
Forward Transfer Admittance
|Y
fs
|
- 7 - S
V
DS
= -5V, I
D
= -4.3A
Diode Forward Voltage (Note 7)
V
SD
- -0.75 -1 V
V
GS
= 0V, I
S
= -1.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 1002 -
pF
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
- 125 -
pF
Reverse Transfer Capacitance
C
rss
- 118 -
pF
Gate Resistance
R
g
- 13 -
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (4.5V)
Q
g
- 10.1 -
nC
V
GS
= -4.5V/-10V, V
DS
= -15V,
I
D
= -6A
Total Gate Charge (10V)
Q
g
- 21.1 -
nC
Gate-Source Charge
Q
g
s
- 2.8 -
nC
Gate-Drain Charge
Q
g
d
- 3.2 -
nC
Turn-On Delay Time
t
D
on
-
10.1
- ns
V
GS
= -10V, V
DS
= -15V,
R
G
= 6 , I
D
= -1A
Turn-On Rise Time
t
r
-
6.5
- ns
Turn-Off Delay Time
t
D
off
-
50.1
- ns
Turn-Off Fall Time
t
f
-
22.2
- ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 11 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 3.5V
GS
V = 4.0V
GS
0
5
10
15
20
01 2 3 4 56
Fig. 12 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
P1-P3P4-P6P7-P9

DMC3032LSD-13

Mfr. #:
Buy DMC3032LSD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET
Lifecycle:
New from this manufacturer.
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