A
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS25111A 12/11
Data Sheet
www.microchip.com
32 Mbit (x16) Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
Features
Organized as 2M x16
Single Voltage Read and Write Operations
2.7-3.6V
Superior Reliability
Endurance: 100,000 Cycles (Typical)
Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
Active Current: 6 mA (typical)
Standby Current: 4 µA (typical)
Auto Low Power Mode: 4 µA (typical)
Hardware Block-Protection/WP# Input Pin
Top Block-Protection (top 32 KWord)
for SST39VF3202B
Bottom Block-Protection (bottom 32 KWord)
for SST39VF3201B
Sector-Erase Capability
Uniform 2 KWord sectors
Block-Erase Capability
Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
SST: 128 bits; User: 128 words
Fast Read Access Time:
–70ns
Latched Address and Data
Fast Erase and Word-Program:
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 35 ms (typical)
Word-Program Time: 7 µs (typical)
Automatic Write Timing
Internal V
PP
Generation
End-of-Write Detection
Toggle Bits
Data# Polling
CMOS I/O Compatibility
JEDEC Standard
Flash EEPROM Pin Assignments
Packages Available
48-lead TSOP (12mm x 20mm)
48-ball TFBGA (6mm x 8mm)
All non-Pb (lead-free) devices are RoHS compliant
The SST39VF320xB devices are 2M x16 CMOS Multi-Purpose Flash Plus
(MPF+) manufactured with SST’s proprietary, high-performance CMOS Super-
Flash technology. The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with alternate approaches.
The SST39VF320xB write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pin assignments for x16 memories.
©2011 Silicon Storage Technology, Inc. DS25111A 12/11
2
32 Mbit Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
Data Sheet
A
Microchip Technology Company
Product Description
The SST39VF320xB devices are 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured
with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability and manufacturability compared with alter-
nate approaches. The SST39VF320xB write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39VF320xB devices provide a typical Word-
Program time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion
of Program operation. To protect against inadvertent write, they have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of appli-
cations, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data
retention is rated at greater than 100 years.
The SST39VF320xB devices are suited for applications that require convenient and economical
updating of program, configuration, or data memory. For all system applications, they significantly
improve performance and reliability, while lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program operation is less than alternative flash tech-
nologies. These devices also improve flexibility while lowering the cost for program, data, and con-
figuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high-density, surface mount requirements, the SST39VF320xB devices are offered in 48-lead
TSOP and 48-ball TFBGA packages. See Figure 2 and Figure 3 for pin assignments.
©2011 Silicon Storage Technology, Inc. DS25111A 12/11
3
32 Mbit Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
Data Sheet
A
Microchip Technology Company
Block Diagram
Figure 1: Functional Block Diagram
Figure 2: Pin Assignments for 48-lead TSOP
Y-Decoder
I/O Buffers and Data Latches
1384 B1.0
Address Buffer Latches
X-Decoder
DQ
15
-DQ
0
Memor y Address
OE#
CE#
WE#
SuperFlash
Memor y
Control Logic
WP#
RESET#
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RST#
NC
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
NC
V
SS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
DD
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1384 48-tsop EK P1.0
Standard Pinout
Top View
Die Up

SST39VF3201B-70-4I-B3KE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7 to 3.6V 32Mbit Multi-Purpose Flash
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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