©2011 Silicon Storage Technology, Inc. DS25111A 12/11
13
32 Mbit Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
Data Sheet
A
Microchip Technology Company
Table 9: Device Geometry Information for SST39VF320xB
Address Data Data
27H 0016H Device size = 2
N
Bytes (16H = 22; 2
22
= 4MByte)
28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface
29H 0000H
2AH 0000H Maximum number of bytes in multi-byte write = 2
N
(00H = not supported)
2BH 0000H
2CH 0002H Number of Erase Sector/Block sizes supported by device
2DH 00FFH Sector Information (y+1=Number of sectors; z x 256B = sector size)
2EH 0003H y = 1023+1=1024 sectors (03FFH = 1023)
2FH 0010H
30H 0000H z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
31H 003FH Block Information (y+1=Number of blocks; z x 256B = block size)
32H 0000H y = 63+1=64blocks(003FH = 63)
33H 0000H
34H 0001H z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T9.0 25111
©2011 Silicon Storage Technology, Inc. DS25111A 12/11
14
32 Mbit Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
Data Sheet
A
Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias ............................................. -55°C to +125°C
Storage Temperature ................................................ -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Voltage on A
9
Pin to Ground Potential .....................................-0.5V to 13.2V
Package Power Dissipation Capability (T
A
= 25°C) .................................. 1.0W
Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds
Output Short Circuit Current
1
.................................................. 50mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
Table 10:Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
T10.1 25111
Table 11:AC Conditions of Test
1
1. See Figures 19 and 20
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T11.1 25111
©2011 Silicon Storage Technology, Inc. DS25111A 12/11
15
32 Mbit Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
Data Sheet
A
Microchip Technology Company
Power Up Specifications
All functionalities and DC specifications are specified for a V
DD
ramp rate of greater than 1V per 100
ms (0V to 3V in less than 300 ms). If the VDD ramp rate is slower than 1V per 100 ms, a hardware
reset is required. The recommended V
DD
power-up to RESET# high time should be greater than 100
µs to ensure a proper reset.
Figure 4: Power-Up Diagram
1384 F24.0
V
DD
RESET#
CE#
T
PU-READ
10 0 µs
V
DD
min
0V
V
IH
T
RHR
50 ns

SST39VF3202B-70-4I-B3KE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 32M (2Mx16) 70ns 2.7-3.6V Industrial
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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